专利检索 ap:("Samsung Electronics Co., Ltd.") AND inv:"Sung-Soo Suh" 第 1 页

1.

发明授权
Method of designing a mask and method of manufacturing a semiconductor device using the same 有权

公开(公告)号：US11068635B2

公开(公告)日：2021-07-20

申请号：US16117086

申请日：2018-08-30

申请人： Samsung Electronics Co., Ltd.

发明人： Ki-Ho Yang , Jun-Young Jang , Chang-Hwan Kim , Sung-Soo Suh

IPC分类号： G06F30/392 , G03F1/36 , H01L21/8234 , H01L27/02

摘要： In a method of designing a mask, a first mask including an active region, a gate structure, and a gate tap partially overlapping the active region and the gate structure is designed. The first mask is changed so that a portion of the gate tap is extended. An OPC is performed on the changed first mask to design a second mask.