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Patent Agency Ranking
1.发明授权Server for photographing apparatus and method of providing status notification of photographing apparatus 有权用于摄影装置的服务器和提供拍摄装置的状态通知的方法公开(公告)号：US09529421B2
公开(公告)日：2016-12-27
申请号：US14070794
申请日：2013-11-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin-dong Kim , Sung-ho Eun , Ki-deok Lee
CPC classification number: G06F3/005 , H04N5/225 , H04N5/23206 , H04N5/23222 , H04N5/23241
Abstract: A method for controlling a server connected to a photographing apparatus is provided. The control method includes receiving status information of the photographing apparatus from the photographing apparatus, searching a schedule for using the photographing apparatus from pre-stored scheduling information, determining whether the searched schedule and the status information of the photographing apparatus satisfy preset conditions, respectively, and transmitting notification information to a user terminal apparatus when the conditions are satisfied.
Abstract translation: 提供一种用于控制连接到拍摄装置的服务器的方法。 控制方法包括：从摄影装置接收拍摄装置的状态信息，从预先存储的调度信息中搜索使用拍摄装置的时间表，确定所搜索的时间表和摄影装置的状态信息是否分别满足预设条件， 以及当满足条件时，向用户终端装置发送通知信息。
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公开(公告)号：US10355050B2
公开(公告)日：2019-07-16
申请号：US16006314
申请日：2018-06-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seul-ji Song , Jung-hoon Park , Sung-ho Eun
Abstract: A memory device includes first conductive lines extending on a substrate along a first direction; second conductive lines extending on the first conductive lines along a second direction intersecting with the first direction; and memory cell structures, which are at intersections between the first conductive lines and the second conductive lines and connected to the first conductive lines and the second conductive lines, each of the memory cell structures including a first electrode layer, a second electrode layer, and a resistive memory layer between the first electrode layer and the second electrode layer. A first sidewall of each of the resistive memory layers is sloped and has a horizontal width that decreases in a direction away from the substrate, and a second sidewall of each of the resistive memory layer adjacent to the first sidewall is sloped and has a horizontal width that increases in a direction away from the substrate.
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公开(公告)号：US20140198224A1
公开(公告)日：2014-07-17
申请号：US14070794
申请日：2013-11-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin-dong Kim , Sung-ho Eun , Ki-deok Lee
CPC classification number: G06F3/005 , H04N5/225 , H04N5/23206 , H04N5/23222 , H04N5/23241
Abstract: A method for controlling a server connected to a photographing apparatus is provided. The control method includes receiving status information of the photographing apparatus from the photographing apparatus, searching a schedule for using the photographing apparatus from pre-stored scheduling information, determining whether the searched schedule and the status information of the photographing apparatus satisfy preset conditions, respectively, and transmitting notification information to a user terminal apparatus when the conditions are satisfied.
Abstract translation: 提供一种用于控制连接到拍摄装置的服务器的方法。 控制方法包括：从摄影装置接收拍摄装置的状态信息，从预先存储的调度信息中搜索使用拍摄装置的时间表，确定所搜索的时间表和摄影装置的状态信息是否分别满足预设条件， 以及当满足条件时，向用户终端装置发送通知信息。
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公开(公告)号：US10700127B2
公开(公告)日：2020-06-30
申请号：US16433511
申请日：2019-06-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seul-ji Song , Jung-hoon Park , Sung-ho Eun
Abstract: A memory device includes first conductive lines extending on a substrate along a first direction; second conductive lines extending on the first conductive lines along a second direction intersecting with the first direction; and memory cell structures, which are at intersections between the first conductive lines and the second conductive lines and connected to the first conductive lines and the second conductive lines, each of the memory cell structures including a first electrode layer, a second electrode layer, and a resistive memory layer between the first electrode layer and the second electrode layer. A first sidewall of each of the resistive memory layers is sloped and has a horizontal width that decreases in a direction away from the substrate, and a second sidewall of each of the resistive memory layer adjacent to the first sidewall is sloped and has a horizontal width that increases in a direction away from the substrate.
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公开(公告)号：US20190140021A1
公开(公告)日：2019-05-09
申请号：US16006314
申请日：2018-06-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seul-ji Song , Jung-hoon Park , Sung-ho Eun
CPC classification number: H01L27/2463 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1683
Abstract: A memory device includes first conductive lines extending on a substrate along a first direction; second conductive lines extending on the first conductive lines along a second direction intersecting with the first direction; and memory cell structures, which are at intersections between the first conductive lines and the second conductive lines and connected to the first conductive lines and the second conductive lines, each of the memory cell structures including a first electrode layer, a second electrode layer, and a resistive memory layer between the first electrode layer and the second electrode layer. A first sidewall of each of the resistive memory layers is sloped and has a horizontal width that decreases in a direction away from the substrate, and a second sidewall of each of the resistive memory layer adjacent to the first sidewall is sloped and has a horizontal width that increases in a direction away from the substrate.
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