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公开(公告)号：US10355050B2
公开(公告)日：2019-07-16
申请号：US16006314
申请日：2018-06-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seul-ji Song , Jung-hoon Park , Sung-ho Eun
Abstract: A memory device includes first conductive lines extending on a substrate along a first direction; second conductive lines extending on the first conductive lines along a second direction intersecting with the first direction; and memory cell structures, which are at intersections between the first conductive lines and the second conductive lines and connected to the first conductive lines and the second conductive lines, each of the memory cell structures including a first electrode layer, a second electrode layer, and a resistive memory layer between the first electrode layer and the second electrode layer. A first sidewall of each of the resistive memory layers is sloped and has a horizontal width that decreases in a direction away from the substrate, and a second sidewall of each of the resistive memory layer adjacent to the first sidewall is sloped and has a horizontal width that increases in a direction away from the substrate.
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公开(公告)号：US10241510B2
公开(公告)日：2019-03-26
申请号：US15214107
申请日：2016-07-19
Applicant: Samsung Electronics Co., Ltd.
Inventor： Woo-jin Jung , Myung-sik Kim , Je-woong Ryu , Seung-beom Han , Chang-soo Park , Aron Baik , Jung-gap Kuk , Jung-hoon Park , Jin-woo Yoo , Mid-eum Choi
Abstract: Methods and apparatuses are provided for controlling a vehicle. The vehicle is controlled to operate in an autonomous driving mode in which the vehicle is driven without a manipulation by an operator of the vehicle. A request to switch to a manual driving mode, in which the vehicle is driven with the manipulation by the operator, is received. A range of the manipulation regarding a function of the vehicle is determined according to a driving situation of the vehicle in response to the request. The vehicle is controlled to operate in the manual driving mode in which the manipulation by the operator is limited according to the range of the manipulation.
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公开(公告)号：US10700127B2
公开(公告)日：2020-06-30
申请号：US16433511
申请日：2019-06-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seul-ji Song , Jung-hoon Park , Sung-ho Eun
Abstract: A memory device includes first conductive lines extending on a substrate along a first direction; second conductive lines extending on the first conductive lines along a second direction intersecting with the first direction; and memory cell structures, which are at intersections between the first conductive lines and the second conductive lines and connected to the first conductive lines and the second conductive lines, each of the memory cell structures including a first electrode layer, a second electrode layer, and a resistive memory layer between the first electrode layer and the second electrode layer. A first sidewall of each of the resistive memory layers is sloped and has a horizontal width that decreases in a direction away from the substrate, and a second sidewall of each of the resistive memory layer adjacent to the first sidewall is sloped and has a horizontal width that increases in a direction away from the substrate.
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公开(公告)号：US20190140021A1
公开(公告)日：2019-05-09
申请号：US16006314
申请日：2018-06-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seul-ji Song , Jung-hoon Park , Sung-ho Eun
CPC classification number: H01L27/2463 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1683
Abstract: A memory device includes first conductive lines extending on a substrate along a first direction; second conductive lines extending on the first conductive lines along a second direction intersecting with the first direction; and memory cell structures, which are at intersections between the first conductive lines and the second conductive lines and connected to the first conductive lines and the second conductive lines, each of the memory cell structures including a first electrode layer, a second electrode layer, and a resistive memory layer between the first electrode layer and the second electrode layer. A first sidewall of each of the resistive memory layers is sloped and has a horizontal width that decreases in a direction away from the substrate, and a second sidewall of each of the resistive memory layer adjacent to the first sidewall is sloped and has a horizontal width that increases in a direction away from the substrate.
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