公开(公告)号：US20170117042A1

公开(公告)日：2017-04-27

申请号：US15205498

申请日：2016-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-kyu LEE ,  Sung-in KIM

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1673 ,  G11C11/1675 ,  G11C13/0002 ,  G11C13/0026 ,  G11C13/0028 ,  G11C13/004 ,  G11C16/26 ,  G11C2013/0045 ,  G11C2013/0078 ,  G11C2213/79 ,  G11C2213/82 ,  H01L27/228

Abstract: A resistive memory device resistive memory device includes a bit line configured to be driven by a bit line driver, a source line configured to be driven by a source line driver adjacent to the bit line driver, and a plurality of memory cells connected between the bit line and the source line. An electrical path of the bit line from each of the plurality of memory cells to the bit line driver increases as an electrical path of the source line from each of the plurality of memory cells to the source line driver decreases.

公开(公告)号：US20160043136A1

公开(公告)日：2016-02-11

申请号：US14677101

申请日：2015-04-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-in KIM ,  Jae-kyu LEE

IPC: H01L27/22 ,  H01L23/535

CPC classification number: H01L27/228 ,  H01L23/535 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A magnetic memory device is provided. The magnetic memory device includes a substrate including a first source/drain region and a second source/drain region; a word line structure between the first and source/drain regions and extending in a first direction; a buried contact electrically connected to the first source/drain region and on the first source/drain region; a contact pad electrically connected to the buried contact and on the buried contact; and a memory portion electrically connected to the contact pad and on the contact pad, the contact pad including a metal silicide layer.

Abstract translation: 提供磁存储器件。 磁存储器件包括：衬底，包括第一源极/漏极区域和第二源极/漏极区域; 在第一和源极/漏极区之间并在第一方向上延伸的字线结构; 电连接到第一源极/漏极区域和第一源极/漏极区域的埋入触点; 接触垫，其电连接到所述埋入触点和所述埋入触点; 以及与所述接触焊盘和所述接触焊盘电连接的存储部分，所述接触焊盘包括金属硅化物层。