公开(公告)号：US10068038B2

公开(公告)日：2018-09-04

申请号：US15277480

申请日：2016-09-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Hwan Jang ,  Sungchul Kim ,  Jiseong Doh ,  Wonsok Lee

IPC: G06F17/50

Abstract: A semiconductor process simulation method includes classifying a semiconductor process simulation into a plurality of blocks based on an annealing simulation, performing a shape simulation corresponding to a block selected from the plurality of blocks, and performing at least two ion implantation simulations among a plurality of ion implantation simulations corresponding to the selected block in parallel, based on result data of the shape simulation corresponding to the selected block.

公开(公告)号：US11374047B2

公开(公告)日：2022-06-28

申请号：US16944286

申请日：2020-07-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SeungSik Kim ,  Sungchul Kim ,  Haeyong Park

IPC: H01L27/146 ,  H04N5/232

Abstract: An image sensor including a substrate having a first, a first device isolation region adjacent to the first surface and defining a unit pixel, a transfer gate on the first surface at an edge of the unit pixel, a photoelectric conversion part in the substrate and adjacent to a first side surface of the transfer gate, and a floating diffusion region in the substrate and adjacent to a second side surface of the transfer gate. The second side surface faces the first side surface. The first device isolation region is spaced apart from the second side surface. The substrate and the first device isolation region are doped with impurities having a first conductivity. A first impurity concentration of the first device isolation region is greater than a second impurity concentration of the substrate.

公开(公告)号：US11222918B1

公开(公告)日：2022-01-11

申请号：US17320873

申请日：2021-05-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungchul Kim ,  Jaeho Kim ,  Uihui Kwon ,  Seoksan Kim ,  Minwoong Seo

IPC: H01L27/146 ,  H04N5/359

Abstract: An image sensor comprising a substrate including an upper surface and a lower surface opposite each other and extending in a first direction and a second direction, a first isolation region in the substrate and apart from the upper surface in a third direction perpendicular to the first direction and second direction, the first isolation region defining a boundary of a photoelectric conversion region, a second isolation region in the substrate and extending in the third direction from the lower surface to the first isolation region, a plurality of transistors on the upper surface in the photoelectric conversion region, and a photoelectric conversion device in the substrate in the photoelectric conversion region. The first isolation region includes a potential well doped with an impurity of a first conductivity type, and the second isolation region includes an insulating material layer.

公开(公告)号：US10770499B2

公开(公告)日：2020-09-08

申请号：US16124300

申请日：2018-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： SeungSik Kim ,  Sungchul Kim ,  Haeyong Park

IPC: H01L27/146 ,  H04N5/232

Abstract: An image sensor including a substrate having a first, a first device isolation region adjacent to the first surface and defining a unit pixel, a transfer gate on the first surface at an edge of the unit pixel, a photoelectric conversion part in the substrate and adjacent to a first side surface of the transfer gate, and a floating diffusion region in the substrate and adjacent to a second side surface of the transfer gate. The second side surface faces the first side surface. The first device isolation region is spaced apart from the second side surface. The substrate and the first device isolation region are doped with impurities having a first conductivity. A first impurity concentration of the first device isolation region is greater than a second impurity concentration of the substrate.

公开(公告)号：US09165528B2

公开(公告)日：2015-10-20

申请号：US14047160

申请日：2013-10-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungchul Kim ,  Young Min Kim ,  Sangjoon Hyung ,  Seokhee Hwang

IPC: G09G5/02 ,  G09G3/20

CPC classification number: G09G5/02 ,  G09G3/20 ,  G09G2310/0275 ,  G09G2310/0281 ,  G09G2310/04 ,  G09G2330/021 ,  G09G2330/022 ,  G09G2340/16 ,  G09G2360/12 ,  G09G2360/127

Abstract: A display system may include a system board configured to compare image signals of a current and previous frame and configured to output the image signals of the current frame and a comparison result; a display panel configured to receive data signals in response to gate signals and configured to include pixels for displaying images corresponding to the data signals; a timing controller configured to output image signals and control signals; a gate driving unit configured to provide the gate signals to the pixels in response to the control signals; and/or a data driving unit configured to store the image signals provided from the timing controller and configured to convert the image signals into the data signals in response to the control signals, the data signals being provided to the pixels.

Abstract translation: 显示系统可以包括被配置为比较当前帧和先前帧的图像信号并被配置为输出当前帧的图像信号和比较结果的系统板; 显示面板，配置为响应于门信号接收数据信号，并且被配置为包括用于显示对应于数据信号的图像的像素; 定时控制器，被配置为输出图像信号和控制信号; 栅极驱动单元，被配置为响应于所述控制信号向所述像素提供所述栅极信号; 和/或数据驱动单元，被配置为存储从定时控制器提供的图像信号，并且被配置为响应于控制信号将图像信号转换成数据信号，数据信号被提供给像素。

公开(公告)号：US20190131328A1

公开(公告)日：2019-05-02

申请号：US16124300

申请日：2018-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： SeungSik Kim ,  Sungchul Kim ,  Haeyong Park

IPC: H01L27/146

Abstract: An image sensor including a substrate having a first, a first device isolation region adjacent to the first surface and defining a unit pixel, a transfer gate on the first surface at an edge of the unit pixel, a photoelectric conversion part in the substrate and adjacent to a first side surface of the transfer gate, and a floating diffusion region in the substrate and adjacent to a second side surface of the transfer gate. The second side surface faces the first side surface. The first device isolation region is spaced apart from the second side surface. The substrate and the first device isolation region are doped with impurities having a first conductivity. A first impurity concentration of the first device isolation region is greater than a second impurity concentration of the substrate.