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    SEMICONDUCTOR DEVICE
    1.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240074155A1

    公开(公告)日：2024-02-29

    申请号：US18236143

    申请日：2023-08-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Taehyuk Kim ,  Taegyu Kang ,  Seokho Shin ,  Kiseok Lee ,  Sangho Lee ,  Keunnam Kim ,  Seokhan Park ,  Joongchan Shin ,  Moonyoung Jeong ,  Eunju Cho

    IPC: H10B12/00

    CPC classification number: H10B12/482 ,  H10B12/315 ,  H10B12/488

    Abstract: A semiconductor device includes a substrate, a bit line extending on the substrate in a first direction, first and second active patterns on the bit line, a back-gate electrode between the first and second active patterns and extending across the bit line and in a second direction that is perpendicular to the first direction, a first word line extending in the second direction at one side of the first active pattern, a second word line extending in the second direction at the other side of the second active pattern, and a contact pattern connected to each of the first and second active patterns, wherein the contact pattern sequentially includes an epitaxial growth layer, a doped polysilicon layer, and a silicide layer.

    SEMICONDUCTOR DEVICES
    3.
    发明申请
    SEMICONDUCTOR DEVICES 有权

    公开(公告)号：US20250151260A1

    公开(公告)日：2025-05-08

    申请号：US18739698

    申请日：2024-06-11

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Taehyuk Kim ,  Taejin Park ,  Hyeran Lee ,  Sungsoo Yim

    IPC: H10B12/00 ,  H01L29/78

    Abstract: A semiconductor device includes bit line structures spaced apart from each other in a first direction, and each of the bit line structures extends in a second direction; channels on the bit line structures, wherein the channels are electrically connected to the bit line structures and spaced apart from each other in the first direction; a gate insulation pattern structure on sidewalls of each of the channels; a gate electrode structure including: a first gate electrode on a first sidewall of the gate insulation pattern structure; and a second gate electrode on a second sidewall of the gate insulation pattern structure, wherein the second sidewall faces the first sidewall in the second direction, wherein the second gate electrode is on a third sidewall in the first direction of an end portion of the gate insulation pattern structure, and wherein the second gate electrode contacts the first gate electrode.

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