公开(公告)号：US20160343711A1

公开(公告)日：2016-11-24

申请号：US15228292

申请日：2016-08-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwan-Young KIM ,  Jae-Hyun YOO ,  Jin-Hyun NOH ,  Woo-Yeol MAENG ,  Yong-Woo JEON

IPC: H01L27/088 ,  H01L29/08 ,  H01L29/06 ,  H01L23/528 ,  H01L29/78

CPC classification number: H01L27/0886 ,  H01L23/528 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0865 ,  H01L29/0873 ,  H01L29/0882 ,  H01L29/4232 ,  H01L29/4236 ,  H01L29/7816 ,  H01L29/7835 ,  H01L29/785

Abstract: According to example embodiments, a semiconductor device includes a first fin, a second fin that is separated from the first fin, and a gate on the first fin and the second fin. The gate crosses the first fin and the second fin. The first fin includes a first doped area at both sides of the gate. The first doped area is configured to have a first voltage applied thereto. The second fin includes a second doped area at both sides of the gate. The second doped area is configured to have a second voltage applied thereto. The second voltage is different than the first voltage.

Abstract translation: 根据示例性实施例，半导体器件包括第一鳍片，与第一鳍片分离的第二鳍片和第一鳍片和第二鳍片上的栅极。 门穿过第一鳍和第二鳍。 第一鳍片包括在栅极两侧的第一掺杂区域。 第一掺杂区被配置为具有施加到其上的第一电压。 第二鳍片包括在栅极两侧的第二掺杂区域。 第二掺杂区被配置为具有施加到其上的第二电压。 第二电压不同于第一电压。