公开(公告)号：US11062818B2

公开(公告)日：2021-07-13

申请号：US14588734

申请日：2015-01-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong-jun Jeong ,  Seong-jun Park ,  Hyeon-jin Shin ,  Yea-hyun Gu ,  Hyoung-sub Kim ,  Jae-hyun Yang

IPC: B32B9/00 ,  H01B1/04 ,  C23C16/02 ,  C23C16/455 ,  H01L29/51 ,  H01L29/778 ,  C23C16/40 ,  H01L29/16

Abstract: Example embodiments relate to a stacking structure having a material layer formed on a graphene layer, and a method of forming the material layer on the graphene layer. In the stacking structure, when the material layer is formed on the graphene layer by using an ALD method, an intermediate layer as a seed layer may be formed on the graphene layer by using a linear type precursor.