公开(公告)号：US20220098221A1

公开(公告)日：2022-03-31

申请号：US17477674

申请日：2021-09-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： YongChul KIM

IPC: C07F7/08 ,  C09K11/66 ,  C01G21/00 ,  H01L51/00

Abstract: A light-emitting material including aminosiloxane and a light-emitting compound represented by Formula 1, a light-emitting device including the light-emitting material, a method of preparing the light-emitting material, and a method of preparing the light-emitting compound represented by Formula 1: A1B1X13,  Formula 1 wherein A1 may be an alkali metal, B1 may be Pb, Sn, or any combination thereof, and X1 may be a halogen.

公开(公告)号：US20210292645A1

公开(公告)日：2021-09-23

申请号：US17108310

申请日：2020-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongwon CHUNG ,  Hyungjun KIM ,  Byunghwa SEO ,  YongChul KIM

IPC: C09K11/66 ,  H01L51/00

Abstract: A light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an activation layer located between the first electrode and the second electrode and includes an emission layer and an auxiliary layer, wherein the auxiliary layer is located between the first electrode and the emission layer and includes a block copolymer, the block copolymer includes at least one hydrophilic block and at least one hydrophobic block, and the emission layer includes a perovskite structure.

公开(公告)号：US20210143287A1

公开(公告)日：2021-05-13

申请号：US17037859

申请日：2020-09-30

Applicant: Samsung Electronics Co., Ltd. ,  UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY

Inventor： Jong Won CHUNG ,  Sukho CHOI ,  Sung HEO ,  Sung KIM ,  YongChul KIM

IPC: H01L31/0224 ,  H01L33/26 ,  H01L31/032 ,  H01L31/0232 ,  H01L31/18 ,  H01L33/50 ,  H01L33/00 ,  H01L33/36

Abstract: Provided are an optoelectronic apparatus including an on-chip optoelectronic diode capable of receiving and emitting light, and a method of manufacturing the same.