公开(公告)号：US10366769B2

公开(公告)日：2019-07-30

申请号：US15810741

申请日：2017-11-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-sung Cho ,  Il-han Park ,  Jung-yun Yun ,  Youn-ho Hong

IPC: G11C16/34 ,  G11C16/04 ,  G11C16/10 ,  G11C11/56 ,  G11C16/30 ,  G11C16/08

Abstract: Provided is a programming method of a nonvolatile memory device, the method comprising the steps of a first programming loop including applying a first verifying voltage to word lines of a plurality of first memory cells for being programmed in a first programming state of a first target threshold voltage and detecting, from among the plurality of first memory cells, a first slow memory cell whose threshold voltage is less than the first verifying voltage, a second programming loop including applying a first program pulse to the first memory cells and applying a second program pulse to the first slow memory cell, a voltage level of the second program pulse of the second program loop being greater than a voltage level of the first program pulse of the second program loop, and a third programming loop.