公开(公告)号：US20170221811A1

公开(公告)日：2017-08-03

申请号：US15491227

申请日：2017-04-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yunjung CHOI ,  Kivin IM ,  Dongbok LEE ,  lnseak HWANG

IPC: H01L23/528 ,  H01L27/108

CPC classification number: H01L23/528 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10885 ,  H01L27/10891 ,  H01L27/115 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor devices are provided including a plurality of nonlinear bit lines formed on a substrate including a plurality of active areas; a plurality of word lines that pass through the plurality of active areas; an integral spacer that covers two sidewalls of the plurality of nonlinear bit lines and defines a plurality of spaces that expose two adjacent ones of the plurality of active areas; two conductive patterns that respectively abut on the two adjacent active areas in one of the plurality of spaces that is selected; and a contact separating insulation layer that is formed between the two conductive patterns in the one selected space.