公开(公告)号：US20190094072A1

公开(公告)日：2019-03-28

申请号：US15867981

申请日：2018-01-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-gil PARK ,  Byeong-hwan JEON ,  Tae-heung AHN

IPC: G01J3/18 ,  G01J3/443 ,  G01J3/36

Abstract: Provided are an atomic emission spectrometer (AES), which may be downscaled with high detection intensity, a semiconductor manufacturing facility including the AES, and a method of manufacturing a semiconductor device using the AES. The AES includes: at least one laser generator configured to generate laser beams; a chamber including an elliptical or spherical mirror disposed inside the chamber and configured to reflect the laser beams transmitted into the chamber so that the laser beams are condensed and irradiated on an analyte contained in the chamber to generate plasma and emit plasma light; a supplier connected to the chamber to supply the analyte into the chamber; and a spectrometer configured to receive and analyze the plasma light, and obtain data regarding the plasma light to detect elements in the analyte.

公开(公告)号：US20170108329A1

公开(公告)日：2017-04-20

申请号：US15206613

申请日：2016-07-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： KWANG-SOO KIM ,  Harutaka SEKIYA ,  Kwang-jun YOON ,  Sung-won PARK ,  Young-duk KIM ,  Heon-ju SHIN ,  Byeong-hwan JEON

IPC: G01B11/00 ,  G01N21/01 ,  G01N21/956 ,  H01L21/68 ,  G01N21/95

CPC classification number: G01B11/002 ,  G01N21/9501 ,  G01N21/956 ,  G01N2201/121 ,  H01L21/681

Abstract: An automatic focus control apparatus includes a light detector, which receives light reflected by a surface of a wafer and generates a light reception signal based on the received signal, a controller, which generates a driving signal, the driving signal being one of a first signal and a second signal, the driving signal indicating whether to perform automatic focus control based on the light reception signal, a focus error corrector, which generates a focus error correction signal based on the driving signal, and a stage driver, which displaces a wafer stage supporting the wafer by adjusting the z-axis position of the wafer stage based on the focus error correcting signal if the driving signal is the first signal, and maintains the z-axis position of the wafer stage based on the focus error correction signal if the driving signal is the second signal.

公开(公告)号：US20200003685A1

公开(公告)日：2020-01-02

申请号：US16235268

申请日：2018-12-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byeong-hwan JEON

IPC: G01N21/55

Abstract: Provided are a method and an apparatus for inspecting an extreme ultraviolet (EUV) mask at a high speed with high optical efficiency, and a method of manufacturing the EUV mask, wherein the method of inspecting the EUV mask is included in the method of manufacturing the EUV mask. The apparatus for inspecting the EUV mask includes a light source configured to generate and output light, a linear zone plate configured to convert the light from the light source to light having a linear form, a slit plate configured to output the light having the linear form by removing a higher-order diffracted light component from the light having the linear form, a stage on which the EUV mask is located, and a detector configured to detect the light reflected from the EUV mask, in response to the light being irradiated onto and reflected from the EUV mask.

公开(公告)号：US20170352599A1

公开(公告)日：2017-12-07

申请号：US15429525

申请日：2017-02-10

Applicant: Samsung Electronics Co.,Ltd.

Inventor： Jun-bum PARK ,  Kyung-sik KANG ,  Byeong-hwan JEON ,  Jae-chol JOO ,  Tae-joong KIM

IPC: H01L21/66 ,  G01N21/95 ,  G01N21/956 ,  G01J3/42 ,  H01L21/3205 ,  G01N21/27 ,  G01N21/25 ,  G01J3/28

Abstract: Manufacturing a device may include inspecting a surface of an inspection target device. The inspecting may include forming a metal layer on a surface of the inspection target device on which a minute pattern is formed, directing a beam of light to be incident and normal to the surface of the inspection target device, determining a spectrum of light reflected from the surface of the inspection target device, and generating, via the spectrum, information associated with a structural characteristic of the minute pattern formed on the inspection target device. The inspection target device may be selectively incorporated into the manufactured device based on the generated information.

公开(公告)号：US20210335600A1

公开(公告)日：2021-10-28

申请号：US17365112

申请日：2021-07-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byeong-hwan JEON

IPC: H01L21/027 ,  H05G2/00 ,  G21K1/06 ,  G21K1/02 ,  G03F7/20 ,  G21K1/10

Abstract: A method of manufacturing an integrated circuit (IC) device includes forming a photoresist layer on a substrate, and exposing the photoresist layer to light by using a photolithographic apparatus including a light generator. The light generator includes a chamber having a plasma generation space, an optical element in the chamber, and a debris shielding assembly between the optical element and the plasma generation space in the chamber, and the debris shielding assembly includes a protective film facing the optical element and being spaced apart from the optical element with a protective space therebetween, the protective space including an optical path, and a protective frame to support the protective film and to shield the protective space from the plasma generation space.