公开(公告)号：US20240105269A1

公开(公告)日：2024-03-28

申请号：US17954489

申请日：2022-09-28

Applicant: SanDisk Technologies LLC

Inventor： Anirudh Amarnath ,  Aravind Suresh ,  Abhijith Prakash

IPC: G11C16/26 ,  G11C16/10 ,  G11C16/24

CPC classification number: G11C16/26 ,  G11C16/102 ,  G11C16/24

Abstract: Systems and methods for bit line modulation to compensate for cell source variation are disclosed. For example, a method for reading data from non-volatile storage comprising determining a first bit line level based on a first programmed data state that is being sensed and determining a second bit line level based on a second programmed data state that is being sensed. As another example, a storage device comprising a first bit line driver configured to generate a first bit line level for a first set of bit lines corresponding to a first set of memory strings based on a first cell source level associated with the first set of memory strings a second bit line driver configured to generate a second bit line level for a second set of bit lines corresponding to a second set of memory strings based on a second cell source level associated with the second set of memory strings.

公开(公告)号：US12230333B2

公开(公告)日：2025-02-18

申请号：US17954489

申请日：2022-09-28

Applicant: SanDisk Technologies LLC

Inventor： Anirudh Amarnath ,  Aravind Suresh ,  Abhijith Prakash

IPC: G11C16/26 ,  G11C16/10 ,  G11C16/24

Abstract: Systems and methods for bit line modulation to compensate for cell source variation are disclosed. For example, a method for reading data from non-volatile storage comprising determining a first bit line level based on a first programmed data state that is being sensed and determining a second bit line level based on a second programmed data state that is being sensed. As another example, a storage device comprising a first bit line driver configured to generate a first bit line level for a first set of bit lines corresponding to a first set of memory strings based on a first cell source level associated with the first set of memory strings a second bit line driver configured to generate a second bit line level for a second set of bit lines corresponding to a second set of memory strings based on a second cell source level associated with the second set of memory strings.