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公开(公告)号：US20180287636A1
公开(公告)日：2018-10-04
申请号：US15475638
申请日：2017-03-31
Applicant: SanDisk Technologies LLC
Inventor： Rami Rom , ldan Goldenberg , Alexander Bazarsky , Eran Sharon , Ran Zamir , ldan Alrod , Stella Achtenberg
CPC classification number: H03M13/1125 , G06F3/0619 , G06F3/0655 , G06F3/0688 , H03M13/6566
Abstract: A storage device may program data differently for different memory areas of a memory. In some embodiments, the storage device may use different codebooks for different memory areas. In other embodiments, the storage device may modify bit orders differently for different memory areas. What codebook the storage device uses or what bit order modification the storage device performs for a particular memory area may depend on the bad storage locations specific to that memory area. Where different codebooks are used, optimal codebooks may be selected from a library, or codebooks may be modified based on the bad storage locations of the memory areas.
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公开(公告)号：US20180287632A1
公开(公告)日：2018-10-04
申请号：US15475666
申请日：2017-03-31
Applicant: SanDisk Technologies LLC
Inventor： Rami Rom , ldan Goldenberg , Alexander Bazarsky , Eran Sharon , Ran Zamir , ldan Alrod , Stella Achtenberg
CPC classification number: H03M13/11 , G06F3/0619 , G06F3/0655 , G06F3/0688 , H03M13/1125 , H03M13/6566
Abstract: A storage device may program data differently for different memory areas of a memory. In some embodiments, the storage device may use different codebooks for different memory areas. In other embodiments, the storage device may modify bit orders differently for different memory areas. What codebook the storage device uses or what bit order modification the storage device performs for a particular memory area may depend on the bad storage locations specific to that memory area. Where different codebooks are used, optimal codebooks may be selected from a library, or codebooks may be modified based on the bad storage locations of the memory areas.
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