公开(公告)号：US08780503B2

公开(公告)日：2014-07-15

申请号：US13652907

申请日：2012-10-16

Applicant: Seagate Technology LLC

Inventor： John S. Wright ,  Razman Zambri

IPC: G11B5/48

CPC classification number: H01L41/083 ,  G11B5/483 ,  G11B5/4873 ,  G11B5/5552 ,  H01L41/0946

Abstract: Apparatus for positioning a control object, such as a microactuator used to position a read/write transducer adjacent a data storage medium. In accordance with some embodiments, a piezoelectric transducer (PZT) element is adapted to induce rotational displacement of the control object in a bending mode of operation. The PZT element has a plurality of piezoelectric material layers and a plurality of electrically conductive layers interposed between the piezoelectric material layers. The piezoelectric material layers include a first subset of active layers and at least one non-active layer.

Abstract translation: 用于定位控制对象的装置，例如用于将读/写换能器定位在数据存储介质附近的微致动器。 根据一些实施例，压电换能器（PZT）元件适于在弯曲操作模式下引起控制对象的旋转位移。 PZT元件具有多个压电材料层和介于压电材料层之间的多个导电层。 压电材料层包括有源层的第一子集和至少一个非有源层。

公开(公告)号：US20140104722A1

公开(公告)日：2014-04-17

申请号：US13652907

申请日：2012-10-16

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： John S. Wright ,  Razman Zambri

IPC: G11B21/02 ,  G11B21/24 ,  H01L41/083

CPC classification number: H01L41/083 ,  G11B5/483 ,  G11B5/4873 ,  G11B5/5552 ,  H01L41/0946

Abstract: Apparatus for positioning a control object, such as a microactuator used to position a read/write transducer adjacent a data storage medium. In accordance with some embodiments, a piezoelectric transducer (PZT) element is adapted to induce rotational displacement of the control object in a bending mode of operation. The PZT element has a plurality of piezoelectric material layers and a plurality of electrically conductive layers interposed between the piezoelectric material layers. The piezoelectric material layers include a first subset of active layers and at least one non-active layer.

Abstract translation: 用于定位控制对象的装置，例如用于将读/写换能器定位在数据存储介质附近的微致动器。 根据一些实施例，压电换能器（PZT）元件适于在弯曲操作模式下引起控制对象的旋转位移。 PZT元件具有多个压电材料层和介于压电材料层之间的多个导电层。 压电材料层包括有源层的第一子集和至少一个非有源层。