公开(公告)号：US20150064840A1

公开(公告)日：2015-03-05

申请号：US14464932

申请日：2014-08-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa SHIMOMURA ,  Masashi OOTA ,  Yoshinori YAMADA

IPC: H01L21/02

CPC classification number: H01L21/02565 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02472 ,  H01L21/02554 ,  H01L21/02631 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: A method for forming a single crystal oxide film with high productivity is provided. Further, a method for forming a single crystal oxide film at a lower temperature is provided. In addition, a method for forming a single crystal oxide film by a simpler method is provided. An oxide film having crystal parts is formed over a formation surface, and the oxide film is single crystallized by performing heat treatment. Further, an oxide film having crystal parts in which the c-axis are aligned in a direction parallel to a normal direction of the formation surface or a normal direction of a surface of the oxide film and having no crystal grain boundary between the crystal parts is used as the oxide film formed over the formation surface.

Abstract translation: 提供了一种以高生产率形成单晶氧化膜的方法。 此外，提供了在较低温度下形成单晶氧化物膜的方法。 此外，提供了通过更简单的方法形成单晶氧化物膜的方法。 在形成表面上形成具有晶体部分的氧化膜，通过进行热处理，氧化膜单一结晶。 此外，具有晶体部分的氧化物膜，其中c轴在平行于形成表面的法线方向的方向上或氧化膜的表面的法线方向上排列，并且在晶体部件之间不具有晶界边界 用作形成在形成表面上的氧化膜。

公开(公告)号：US20150255534A1

公开(公告)日：2015-09-10

申请号：US14636477

申请日：2015-03-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yoshinori YAMADA ,  Yusuke NONAKA ,  Masashi OOTA ,  Yoichi KUROSAWA ,  Noritaka ISHIHARA ,  Takashi HAMADA ,  Mitsuhiro ICHIJO ,  Yuji EGI

IPC: H01L29/04 ,  H01L29/36 ,  H01L29/786

CPC classification number: H01L29/78693 ,  H01L27/1156 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A method for forming an oxide that can be used as a semiconductor of a transistor or the like is provided. In particular, a method for forming an oxide with fewer defects such as grain boundaries is provided. One embodiment of the present invention is a semiconductor device including an oxide semiconductor, an insulator, and a conductor. The oxide semiconductor includes a region overlapping with the conductor with the insulator therebetween. The oxide semiconductor includes a crystal grain with an equivalent circle diameter of 1 nm or more and a crystal grain with an equivalent circle diameter less than 1 nm.

Abstract translation: 提供了可以用作晶体管等的半导体的氧化物的形成方法。 特别地，提供了形成具有较少缺陷如晶界的氧化物的方法。 本发明的一个实施例是包括氧化物半导体，绝缘体和导体的半导体器件。 氧化物半导体包括与导体重叠的区域，其间具有绝缘体。 氧化物半导体包括当量圆直径为1nm以上的晶粒和等效圆直径小于1nm的晶粒。