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    Basic quencher/developer solutions for photoresists
    1.
    发明申请
    Basic quencher/developer solutions for photoresists 失效
    用于光致抗蚀剂的基本猝灭剂/显影剂溶液

    公开(公告)号：US20060024616A1

    公开(公告)日：2006-02-02

    申请号：US11143126

    申请日：2005-06-01

    申请人： Shan Clark ,  Kim-Khanh Ho ,  James Clarke ,  Ernisse Putna ,  Wang Yueh ,  Robert Meagley

    发明人： Shan Clark ,  Kim-Khanh Ho ,  James Clarke ,  Ernisse Putna ,  Wang Yueh ,  Robert Meagley

    IPC分类号： G03C5/00

    CPC分类号： G03F7/327

    摘要： A basic developer/quencher solution formulated to include at least one supercritical fluid or liquid solvent and a base may be used to quench a photo-generated acid within a photoresist as well as develop the photoresist. The supercritical fluid or liquid solvent may be carbon dioxide and the base may be quaternary ammonium salt that has side groups that increase the solubility of the quaternary ammonium salt in carbon dioxide.

    摘要翻译： 配制成包括至少一种超临界流体或液体溶剂和碱的基本显影剂/猝灭剂溶液可用于淬灭光致抗蚀剂内的光生酸，以及显影光致抗蚀剂。 超临界流体或液体溶剂可以是二氧化碳，碱可以是具有增加季铵盐在二氧化碳中的溶解度的侧基的季铵盐。

    Basic supercritical solutions for quenching and developing photoresists
    2.
    发明申请
    Basic supercritical solutions for quenching and developing photoresists 审中-公开
    用于淬火和发展光刻胶的基本超临界解决方案

    公开(公告)号：US20060003271A1

    公开(公告)日：2006-01-05

    申请号：US10883457

    申请日：2004-06-30

    申请人： Shan Clark ,  Kim-Khanh Ho ,  James Clarke ,  Ernisse Putna ,  Wang Yueh

    发明人： Shan Clark ,  Kim-Khanh Ho ,  James Clarke ,  Ernisse Putna ,  Wang Yueh

    IPC分类号： G03F7/30

    CPC分类号： G03F7/327

    摘要： A basic supercritical solution formulated to include at least one supercritical fluid and a base may be used to quench a photo-generated acid within a photoresist as well as develop the photoresist. The base may be the supercritical fluid in the basic supercritical solution. A super critical fluid is a state of matter above the critical temperature and pressure (Tc and Pc). A basic supercritical solution formulated to include at least one supercritical fluid has a low viscosity and surface tension and is capable of penetrating narrow features having high aspect ratios and the photoresist material due to the gas-like nature of the supercritical fluid.

    摘要翻译： 配制成包含至少一种超临界流体和碱的基本超临界溶液可用于淬灭光致抗蚀剂内的光生酸，以及显影光致抗蚀剂。 碱可以是基本超临界溶液中的超临界流体。 超临界流体是高于临界温度和压力（T T c C和C C）的物质状态。 配制成包含至少一种超临界流体的基本超临界溶液具有低粘度和表面张力，并且由于超临界流体的气体性质，能够穿透具有高纵横比的窄特征和光致抗蚀剂材料。

    Selective removal of sacrificial light absorbing material over porous dielectric
    4.
    发明申请
    Selective removal of sacrificial light absorbing material over porous dielectric 审中-公开
    通过多孔介质选择性去除牺牲光吸收材料

    公开(公告)号：US20070155161A1

    公开(公告)日：2007-07-05

    申请号：US11322898

    申请日：2005-12-30

    申请人： Vijayakumar Ramachandrarao ,  Kim-Khanh Ho

    发明人： Vijayakumar Ramachandrarao ,  Kim-Khanh Ho

    IPC分类号： H01L21/20 ,  H01L21/4763

    CPC分类号： H01L21/31144 ,  H01L21/02063 ,  H01L21/31111 ,  H01L21/31138 ,  H01L21/76808

    摘要： A method of forming a semiconductor device. The method comprises forming a conductive layer on a substrate, forming a porous dielectric layer on the conductive layer, and forming a first etched region by removing a first portion of the porous dielectric layer. The first etched region is then filled with a sacrificial light absorbing material. A layer of photoresist is then patterned to define a second region to be etched. A second region is then etched by removing part of the sacrificial light absorbing material and a second portion of the porous dielectric layer. The layer of photoresist is then removed. The remaining portions of the sacrificial light absorbing material is then removed selectively using an anhydrous solvent comprising fluoride and a solvent having molecules with at least one —OH group and three to six carbons, wherein the sacrificial light absorbing material is selectively removed over the porous dielectric layer.

    摘要翻译： 一种形成半导体器件的方法。 该方法包括在衬底上形成导电层，在导电层上形成多孔介电层，并通过去除多孔电介质层的第一部分形成第一蚀刻区域。 然后用牺牲光吸收材料填充第一蚀刻区域。 然后将一层光致抗蚀剂图案化以限定待蚀刻的第二区域。 然后通过去除部分牺牲光吸收材料和多孔介电层的第二部分来蚀刻第二区域。 然后去除光致抗蚀剂层。 然后使用包含氟化物和具有至少一个-OH基团和3-6个碳原子的分子的溶剂的无水溶剂选择性除去剩余部分的牺牲光吸收材料，其中牺牲光吸收材料在多孔电介质上选择性地除去 层。