Basic quencher/developer solutions for photoresists
    1.
    发明申请
    Basic quencher/developer solutions for photoresists 失效
    用于光致抗蚀剂的基本猝灭剂/显影剂溶液

    公开(公告)号:US20060024616A1

    公开(公告)日:2006-02-02

    申请号:US11143126

    申请日:2005-06-01

    IPC分类号: G03C5/00

    CPC分类号: G03F7/327

    摘要: A basic developer/quencher solution formulated to include at least one supercritical fluid or liquid solvent and a base may be used to quench a photo-generated acid within a photoresist as well as develop the photoresist. The supercritical fluid or liquid solvent may be carbon dioxide and the base may be quaternary ammonium salt that has side groups that increase the solubility of the quaternary ammonium salt in carbon dioxide.

    摘要翻译: 配制成包括至少一种超临界流体或液体溶剂和碱的基本显影剂/猝灭剂溶液可用于淬灭光致抗蚀剂内的光生酸,以及显影光致抗蚀剂。 超临界流体或液体溶剂可以是二氧化碳,碱可以是具有增加季铵盐在二氧化碳中的溶解度的侧基的季铵盐。

    Basic supercritical solutions for quenching and developing photoresists
    2.
    发明申请
    Basic supercritical solutions for quenching and developing photoresists 审中-公开
    用于淬火和发展光刻胶的基本超临界解决方案

    公开(公告)号:US20060003271A1

    公开(公告)日:2006-01-05

    申请号:US10883457

    申请日:2004-06-30

    IPC分类号: G03F7/30

    CPC分类号: G03F7/327

    摘要: A basic supercritical solution formulated to include at least one supercritical fluid and a base may be used to quench a photo-generated acid within a photoresist as well as develop the photoresist. The base may be the supercritical fluid in the basic supercritical solution. A super critical fluid is a state of matter above the critical temperature and pressure (Tc and Pc). A basic supercritical solution formulated to include at least one supercritical fluid has a low viscosity and surface tension and is capable of penetrating narrow features having high aspect ratios and the photoresist material due to the gas-like nature of the supercritical fluid.

    摘要翻译: 配制成包含至少一种超临界流体和碱的基本超临界溶液可用于淬灭光致抗蚀剂内的光生酸,以及显影光致抗蚀剂。 碱可以是基本超临界溶液中的超临界流体。 超临界流体是高于临界温度和压力(T T c C和C C)的物质状态。 配制成包含至少一种超临界流体的基本超临界溶液具有低粘度和表面张力,并且由于超临界流体的气体性质,能够穿透具有高纵横比的窄特征和光致抗蚀剂材料。

    Methods and compositions for providing photoresist with improved properties for contacting liquids
    3.
    发明申请
    Methods and compositions for providing photoresist with improved properties for contacting liquids 失效
    用于提供具有改进的液体接触性能的光刻胶的方法和组合物

    公开(公告)号:US20050084794A1

    公开(公告)日:2005-04-21

    申请号:US10688109

    申请日:2003-10-16

    IPC分类号: G03C1/76 G03F7/039 G03F7/20

    CPC分类号: G03F7/2041 G03F7/0392

    摘要: Embodiments of the invention provide methods and compositions for providing photoresists with improved liquid-contact properties. For one embodiment of the invention, a photoresist is provided having one or more constituent components that are resistant to diffusion between the photoresist and an index-matching liquid (IML). For such an embodiment in which the IML is water, a photoresist component is provided that is hydrophobic thus reducing diffusion between the photoresist and the water. In various alternative embodiments of the invention, a photoresist is provided having one or more constituent components that encourage diffusion between the photoresist layer and the IML in such manner as to impart beneficial liquid-contact properties to the photoresist layer. For such an embodiment in which the IML is water, a photoresist is provided having one or more hydrophilic constituents.

    摘要翻译: 本发明的实施方案提供了提供具有改进的液体接触性能的光致抗蚀剂的方法和组合物。 对于本发明的一个实施例,提供具有一个或多个阻挡光致抗蚀剂和折射率匹配液体(IML)之间的扩散的组成成分的光致抗蚀剂。 对于其中IML为水的这种实施方案,提供了疏水性的光致抗蚀剂组分,从而减少光致抗蚀剂和水之间的扩散。 在本发明的各种替代实施例中,提供具有一种或多种构成组分的光致抗蚀剂,其以促使光致抗蚀剂层有益的液体接触性质的方式促进光致抗蚀剂层和IML之间的扩散。 对于其中IML为水的这种实施方案,提供具有一种或多种亲水组分的光致抗蚀剂。

    Reducing outgassing of reactive material upon exposure of photolithography resists
    5.
    发明申请
    Reducing outgassing of reactive material upon exposure of photolithography resists 审中-公开
    在曝光光刻抗蚀剂时减少反应性材料的除气

    公开(公告)号:US20050158654A1

    公开(公告)日:2005-07-21

    申请号:US10761842

    申请日:2004-01-21

    IPC分类号: G03C1/492 G03F7/004

    CPC分类号: G03F7/0045

    摘要: Outgassing of reactive material upon exposure of a photolithographic resist may be reduced. Outgassing may foul optical components of the photolithographic system. In one embodiment, a ring compound with iodine or sulfur may be formed. The ring compound may be more resistant to the generation of reactive outgassing components.

    摘要翻译: 曝光光刻抗蚀剂时反应性材料的除气可能降低。 除气可能会污染光刻系统的光学部件。 在一个实施方案中,可以形成具有碘或硫的环化合物。 环化合物可能更能抵抗反应性除气组分的产生。

    Copolymers and photoresist compositions comprising same
    8.
    发明授权
    Copolymers and photoresist compositions comprising same 失效
    包含其的共聚物和光致抗蚀剂组合物

    公开(公告)号:US06849381B2

    公开(公告)日:2005-02-01

    申请号:US10408522

    申请日:2003-04-07

    摘要: The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 193 nm. Polymers of the invention suitably contain 1) photoacid labile groups that preferably contain an alicyclic moiety; 2) a polymerized electron-deficient monomer; 3) a polymerized cyclic olefin moiety. Particularly preferred polymers of the invention are tetrapolymers or pentapolymers, preferably with differing polymerized norbornene units.

    摘要翻译: 本发明包括聚合物和光致抗蚀剂组合物,其包含作为树脂粘合剂组分的聚合物。 本发明的光刻胶包括可以在短波长例如亚200nm,特别是193nm下有效成像的化学放大的正性抗蚀剂。 本发明的聚合物适当地含有1)优选含有脂环族部分的光酸不稳定基团; 2)聚合电子缺陷单体; 3)聚合的环烯烃部分。 本发明特别优选的聚合物是四聚物或五元共聚物,优选具有不同聚合的降冰片烯单元。

    Methods and compositions for reducing line wide roughness
    9.
    发明授权
    Methods and compositions for reducing line wide roughness 有权
    减少线宽粗糙度的方法和组合物

    公开(公告)号:US07867687B2

    公开(公告)日:2011-01-11

    申请号:US10687288

    申请日:2003-10-15

    IPC分类号: G03F7/004

    摘要: Embodiments of the invention provide a non-chemically amplified photoresist, which results in reduced line wide roughness (LWR). In accordance with one embodiment the photoresist includes a developer-soluble resin (DSR) and a photoactive compound (PAC). For one embodiment of the invention, the even distribution of the PAC within the DSR results in reduced acid diffusion thus reducing LWR. Prior to exposure to the light source, the PAC inhibits solubility of the DSR in the developer. Upon exposure the PAC converts to acid to promote solubility of the DSR. The even distribution of the PAC within the photoresist results in reduced LWR and a reduction in defects. For one embodiment the photoresist is applied in the EUV technology (e.g., wavelength is 13.4 nm). For such an embodiment the LWR may be reduced to less than 1.5 nm allowing for effective fabrication of devices having feature sizes of approximately 15 nm.

    摘要翻译: 本发明的实施例提供非化学放大的光致抗蚀剂,其导致线宽粗糙度(LWR)的降低。 根据一个实施方案,光致抗蚀剂包括显影剂可溶性树脂(DSR)和光敏化合物(PAC)。 对于本发明的一个实施例,PAC在DSR内的均匀分布导致酸扩散减少,从而减少LWR。 在暴露于光源之前,PAC抑制DSR在显影剂中的溶解度。 曝光后,PAC转化为酸,以促进DSR的溶解度。 PAC在光致抗蚀剂内的均匀分布导致LWR降低和缺陷减少。 对于一个实施例,以EUV技术(例如,波长为13.4nm)施加光致抗蚀剂。 对于这样的实施例,LWR可以减小到小于1.5nm,允许有效地制造具有大约15nm的特征尺寸的器件。

    Methods and compositions for providing photoresist with improved properties for contacting liquids
    10.
    发明授权
    Methods and compositions for providing photoresist with improved properties for contacting liquids 失效
    用于提供具有改进的液体接触性能的光刻胶的方法和组合物

    公开(公告)号:US07678527B2

    公开(公告)日:2010-03-16

    申请号:US10688109

    申请日:2003-10-16

    IPC分类号: G03F7/00 G03F7/004 G03F7/20

    CPC分类号: G03F7/2041 G03F7/0392

    摘要: Embodiments of the invention provide methods and compositions for providing photoresists with improved liquid-contact properties. For one embodiment of the invention, a photoresist is provided having one or more constituent components that are resistant to diffusion between the photoresist and an index-matching liquid (IML). For such an embodiment in which the IML is water, a photoresist component is provided that is hydrophobic thus reducing diffusion between the photoresist and the water. In various alternative embodiments of the invention, a photoresist is provided having one or more constituent components that encourage diffusion between the photoresist layer and the IML in such manner as to impart beneficial liquid-contact properties to the photoresist layer. For such an embodiment in which the IML is water, a photoresist is provided having one or more hydrophilic constituents.

    摘要翻译: 本发明的实施方案提供了提供具有改进的液体接触性能的光致抗蚀剂的方法和组合物。 对于本发明的一个实施例,提供具有一个或多个阻挡光致抗蚀剂和折射率匹配液体(IML)之间的扩散的组成成分的光致抗蚀剂。 对于其中IML为水的这种实施方案,提供了疏水性的光致抗蚀剂组分,从而减少光致抗蚀剂和水之间的扩散。 在本发明的各种替代实施例中,提供具有一种或多种构成组分的光致抗蚀剂,其以促使光致抗蚀剂层有益的液体接触性质的方式促进光致抗蚀剂层和IML之间的扩散。 对于其中IML为水的这种实施方案,提供具有一种或多种亲水组分的光致抗蚀剂。