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1.发明授权公开(公告)号：US09234296B2
公开(公告)日：2016-01-12
申请号：US13813551
申请日：2011-07-06
CPC分类号： C30B15/14 , C30B15/30 , C30B29/06 , Y10T117/1068
摘要： The present invention is a semiconductor single crystal manufacturing apparatus including, within a growth furnace main body, a crucible, and a heater disposed around the crucible, wherein a heat insulating cylinder is disposed around the heater within the growth furnace main body, the heat insulating cylinder includes a step portion dividing the heat insulating cylinder into the upper part and the lower part at the inside surface thereof, the inner diameter of the lower part is larger than the inner diameter of the upper part, a heat insulating plate is disposed below the heater and on the inside of the lower part of the heat insulating cylinder within the growth furnace main body, and the diameter of the heat insulating plate is larger than the inner diameter of the upper part of the heat insulating cylinder and is smaller than the inner diameter of the lower part.
摘要翻译： 本发明是一种半导体单晶制造装置，其包括在生长炉主体内的坩埚和设置在坩埚周围的加热器，其中，绝热筒设置在生长炉主体内的加热器周围，绝热 气缸包括将绝热筒分成其内表面的上部和下部的台阶部分，下部的内径大于上部的内径，隔热板设置在 加热器，并且在生长炉主体内的隔热筒的下部的内侧，绝热板的直径大于绝热筒的上部的内径，并且小于内部 下部直径。
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公开(公告)号：US20130125810A1
公开(公告)日：2013-05-23
申请号：US13813551
申请日：2011-07-06
CPC分类号： C30B15/14 , C30B15/30 , C30B29/06 , Y10T117/1068
摘要： The present invention is a semiconductor single crystal manufacturing apparatus including, within a growth furnace main body, a crucible, and a heater disposed around the crucible, wherein a heat insulating cylinder is disposed around the heater within the growth furnace main body, the heat insulating cylinder includes a step portion dividing the heat insulating cylinder into the upper part and the lower part at the inside surface thereof, the inner diameter of the lower part is larger than the inner diameter of the upper part, a heat insulating plate is disposed below the heater and on the inside of the lower part of the heat insulating cylinder within the growth furnace main body, and the diameter of the heat insulating plate is larger than the inner diameter of the upper part of the heat insulating cylinder and is smaller than the inner diameter of the lower part.
摘要翻译： 本发明是一种半导体单晶制造装置，其包括在生长炉主体内的坩埚和设置在坩埚周围的加热器，其中，绝热筒设置在生长炉主体内的加热器周围，绝热 气缸包括将绝热筒分成其内表面的上部和下部的台阶部分，下部的内径大于上部的内径，隔热板设置在 加热器，并且在生长炉主体内的隔热筒的下部的内侧，绝热板的直径大于绝热筒的上部的内径，并且小于内部 下部直径。
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公开(公告)号：US20060057696A1
公开(公告)日：2006-03-16
申请号：US10501930
申请日：2003-01-30
CPC分类号： C12N9/1081
摘要： The present invention provides O-glycan α2,8-sialyltransferase which has novel substrate specificity and substrate selectivity, and β-galactoside α2,6-sialyltransferase which has novel action and substrate specificity. The sialyltransferase of the present invention can be used as a medicament for suppression of cancer metastasis, prevention of virus infection, suppression of inflammatory response, or activation of neural cells.
摘要翻译： 本发明提供具有新的底物特异性和底物选择性的O-聚糖α2,8-唾液酸转移酶，以及具有新作用和底物特异性的β-半乳糖苷α2,6-唾液酸转移酶。 本发明的唾液酸转移酶可以用作抑制癌转移，预防病毒感染，抑制炎性反应或神经细胞活化的药物。
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