摘要:
A method for manufacturing a silica glass crucible, includes: preparing a crucible base material that is made of silica glass and has a crucible shape; fabricating a synthetic silica glass material based on a direct method or a soot method; processing the synthetic silica glass material into the crucible shape without being pulverized; and bonding an inner wall of the crucible base material and an outer wall of the synthetic silica glass material processed into the crucible shape through a silica powder by performing a heat treatment. As a result, it is possible to provide the silica glass crucible that can avoid occurrence of dislocations of silicon single crystal at the time of manufacturing the silicon single crystal, has high heat-resisting properties, and can suppress a reduction in productivity and yield ratio, the manufacturing method thereof, and the method for manufacturing silicon single crystal using such a silica glass crucible.
摘要:
When environmental temperature becomes low, the quantity of light of the backward output light irradiated onto a light absorber formed on a mount over which a chip is mounted, is increased by a light quantity adjuster, to increase the optical absorption by the light absorber, thereby raising its temperature. As a result, the temperature of the chip on the mount rises, thereby enabling to substantially narrow a temperature range on a low temperature side. Accordingly, an optical device with low power consumption that can satisfy characteristics required for signal transmission at a required rate over a wide temperature range can be provided.
摘要:
The present invention is a method for producing a single crystal with pulling the single crystal from a raw material melt in a chamber by CZ method, wherein when growing the single crystal, where a pulling rate is defined as V and a temperature gradient of the crystal is defined as G during growing the single crystal, the temperature gradient G of the crystal is controlled by changing at least two or more of pulling conditions. Thereby, there is provided a method for producing a single crystal in which when the single crystal is grown by CZ method, V/G can be controlled without lowering a pulling rate V, and thus the single crystal including a desired defect region can be produced effectively for a short time.
摘要:
The present invention relates to an optical receptacle which prevents the occurrence of a large impact by collision of a plug body with an optical propagation member. The optical receptacle includes a solid sleeve having a cavity hole into which the plug body is inserted from its one end side and which has an even inner diameter so as not to substantially define a gap with respect to an outer diameter of the plug body and an optical propagation member fixedly secured to the other end side of the cavity hole, with the solid sleeve being formed such that a length from an end portion of the cavity hole on the plug body insertion side to the optical propagation member is longer than a maximum length of extension due to the elastic body of the terminal member.
摘要:
A wavelength selective optical switch according to the present invention detects wavelengths of signal lights input to a signal light input port in a main body portion which performs the switching of optical paths for each wavelength by an angular control of a plurality of mirrors, and also, monitors the intensity of a monitor light which is generated in an internal light source and is given from a monitor light input port disposed in the main body portion to be led to a monitor light output port, to feedback control a reflecting surface angle of the mirror corresponding to the wavelength of the signal light which is not input to the signal light input port, so that the output intensity of the monitor light becomes maximum. As a result, it is possible to reliably control the reflective surface angle of the mirror corresponding to the wavelength of the signal light which is not input, and therefore, the crosstalk doe not occur even when the signal light is newly input.
摘要:
The present invention is a method of manufacturing a silicon single crystal by Czochralski method without performing Dash Necking method, comprising the steps of: providing a seed crystal having a tip end with a sharp-pointed shape or a truncation thereof in which an angle of the tip end is 28° or less; keeping the tip end of the seed crystal at just above a silicon melt to heat it before bringing the tip end of the seed crystal into contact with the silicon melt; bringing the tip end of the seed crystal into contact with the silicon melt and immersing the seed crystal into the silicon melt to a desired diameter; and shifting to pull the single crystal, wherein a temperature variation at a surface of the silicon melt is kept at ±5° C. or less at least for a period from a point of bringing the tip end of the seed crystal into contact with the silicon melt to a point of shifting to pull the single crystal. Thereby, in a method of growing a silicon single crystal by Czochralski method without using Dash Necking method, a success ratio of growing a single crystal free from dislocation can be increased, at the same time a heavy silicon single crystal having a large diameter in which a diameter of a constant diameter portion is over 200 mm can be grown even in the case of growing a silicon single crystal having a crystal orientation of .
摘要:
A rolling bearing intended for longer life by improving seizure resistance and wear resistance in the circumstance with slip contact or in the circumstance where lubricant tends to be exhausted, which is manufactured by applying carburization or carbonitridation to an Si-added material to disperse and precipitate carbides or carbonitrides containing Si or Si—X (X=one or more of Mn, Mo, and Cr) thereby improving the seizure resistance and the wear resistance by the self-lubrication effect thereof, the size of the carbides or carbonitrides being preferably 10 μm or less for preventing flaking, and the area ratio for the carbides or carbonitrides being preferably 1.0–30% for obtaining sufficient self-lubrication effect.
摘要:
In a wavelength selecting optical switch, a shutter is situated near an incident position, which is a position at which the light falls onto the mirrors, and has a plurality of blocking members that prevent or allow light to be incident onto respective mirrors. Moreover, a control unit controls a blocking member corresponding to a mirror of which an angle is to be changed so that the blocking member prevents the light to be incident onto the corresponding mirror.
摘要:
An optical device includes a small and low-cost variable polarization plane rotator that can control a rotation angle of the polarization plane easily. A variable polarization plane rotator is provided with a λ/4 phase plate having an optical axis in the same direction as, or at a 90 degree angle relative to, a polarization direction of an input light beam. A phase difference variable element has an optical axis at a ±45 degree angle relative to the optical axis of the λ/4 phase plate, to apply a variable phase difference between the polarization components parallel to and perpendicular to the optical axis thereof. A phase difference adjustment section adjusts the variable phase difference of the phase difference variable element, wherein the input light beam after being transmitted through the phase difference variable element to form elliptically polarized light or circularly polarized light, is transmitted through the λ/4 phase plate to form linearly polarized light. The polarization plane of the input light beam is rotated by an angle corresponding to the phase difference applied by the phase difference variable element.
摘要:
A spectroscopic apparatus which is compact in size and performs high-precision light-splitting with a large angular dispersion. An optical input-processing section outputs a filtered transmitted light, using a bandpass filter that transmits only wavelength bands at one period of an input light, and collects the filtered transmitted light to generate a collected beam. An optic includes a first reflection surface and a second reflection surface which are high but asymmetric in reflectivity, and causes the collected beam incident thereon to undergo multiple reflections within an inner region between the first reflection surface and the second reflection surface, to thereby cause split beams to be emitted via the second reflection surface. A received light-processing section performs received light processing of the beams emitted from the optic. A control section variably controls at least one of a filter characteristic of the bandpass filter and an optical length through the optic.