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公开(公告)号:US4065734A
公开(公告)日:1977-12-27
申请号:US705177
申请日:1976-07-14
申请人: Shouzo Takeno , Masao Mashita , Toshihiro Onodera
发明人: Shouzo Takeno , Masao Mashita , Toshihiro Onodera
CPC分类号: H03H9/02834 , H03H9/02574
摘要: The elastic surface wave device comprises a piezoelectric substrate having a dielectric constant of .epsilon..sub.2, a dielectric film having a dielectric constant of .epsilon..sub.1 and a thickness of h, and deposited on the piezoelectric substrate, and an inter-digital type input-ouput transducer formed on the dielectric film. The ratio of the dielectric constants .epsilon..sub.1 /.epsilon..sub.2, and a function 2.pi./.lambda..multidot.h proportioned to the thickness of the dielectric film are selected to satisfy a condition established in a frustum shaped region bounded by coordinate points P (.epsilon..sub.1 /.epsilon..sub.2 = 1/5,(2.pi./.lambda.).multidot.h = 0.1), Q(.epsilon..sub.1 /.epsilon..sub.2 = 1/5,(2.pi./.lambda.).multidot.h = 0.00016), R(.epsilon..sub.1 /.epsilon..sub.2 = 1/500,(2.pi./.lambda.).multidot.h = 0.0004), and S(.epsilon..sub.1 /.epsilon..sub.2 = 1/500, (2.pi./.lambda.).multidot.h = 0.006) on a graph wherein the ratio .epsilon..sub.1 /.epsilon..sub.2 is represented on the ordinate and the function (2.pi./80 ).multidot.h on the abscissa, where .lambda. represents the wavelength of the elastic surface wave. As a result, the energy of the elastic surface waves is propagated from the input transducer to the output transducer with a sufficiently large power.
摘要翻译: 弹性表面波装置包括介电常数为ε2的压电基片,介电常数ε为1且厚度为h的电介质膜,并沉积在压电基片上,以及数字型输入输出传感器 形成在电介质膜上。 选择介电常数ε1 /ε2与与电介质膜的厚度成比例的函数2π/λ×h的比率以满足在由坐标点P(ε1 /ε 2 = 1/5,(2π/λ)×h = 0.1),Q(ε1 /ε2 = 1/5,(2π/λ)×h = 0.00016),R(ε1 /ε2 = 500,(2π/λ)xh = 0.0004)和S(ε1 /ε2 = 1/500,(2 pi /λ)xh = 0.006),其中ε1 / 纵坐标和横坐标上的函数(2 pi / 80)xh,其中λ表示弹性表面波的波长。 结果,弹性表面波的能量以足够大的功率从输入传感器传播到输出换能器。
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公开(公告)号:US4772520A
公开(公告)日:1988-09-20
申请号:US22609
申请日:1987-03-04
申请人: Shouzo Takeno , Hideki Matsui , Kazushige Sasaki
发明人: Shouzo Takeno , Hideki Matsui , Kazushige Sasaki
CPC分类号: B41J2/33515 , B41J2/3355 , B41J2/3357 , B41J2/3359 , C23C14/08
摘要: This invention discloses a thermal head having a resistive layer of a thin Ta-Si-O film containing more than 45 mol % and at most 75 mol % of a silicon oxide in terms of SiO.sub.2, and a method of manufacturing a thermal head by sputtering a sintered target in vacuum atmosphere at an argon gas partial pressure of 10.times.10.sup.-3 Torr to 80.times.10.sup.-3 Torr so as to obtain the resistive layer.
摘要翻译: 本发明公开了一种热敏头,其具有包含SiO 2以上的氧化硅多于45摩尔%且最多75摩尔%的薄Ta-Si-O膜的电阻层,以及通过溅射法制造热敏头的方法 在氩气分压为10×10 -3 Torr至80×10 -3 Torr的真空气氛中烧结靶材,以获得电阻层。
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