公开(公告)号：US4065734A

公开(公告)日：1977-12-27

申请号：US705177

申请日：1976-07-14

申请人： Shouzo Takeno ,  Masao Mashita ,  Toshihiro Onodera

发明人： Shouzo Takeno ,  Masao Mashita ,  Toshihiro Onodera

IPC分类号： H03H9/00 ,  H03H9/02 ,  H03H9/145 ,  H03H9/04 ,  H01L41/18 ,  H03H9/26 ,  H03H9/30

CPC分类号： H03H9/02834 ,  H03H9/02574

摘要： The elastic surface wave device comprises a piezoelectric substrate having a dielectric constant of .epsilon..sub.2, a dielectric film having a dielectric constant of .epsilon..sub.1 and a thickness of h, and deposited on the piezoelectric substrate, and an inter-digital type input-ouput transducer formed on the dielectric film. The ratio of the dielectric constants .epsilon..sub.1 /.epsilon..sub.2, and a function 2.pi./.lambda..multidot.h proportioned to the thickness of the dielectric film are selected to satisfy a condition established in a frustum shaped region bounded by coordinate points P (.epsilon..sub.1 /.epsilon..sub.2 = 1/5,(2.pi./.lambda.).multidot.h = 0.1), Q(.epsilon..sub.1 /.epsilon..sub.2 = 1/5,(2.pi./.lambda.).multidot.h = 0.00016), R(.epsilon..sub.1 /.epsilon..sub.2 = 1/500,(2.pi./.lambda.).multidot.h = 0.0004), and S(.epsilon..sub.1 /.epsilon..sub.2 = 1/500, (2.pi./.lambda.).multidot.h = 0.006) on a graph wherein the ratio .epsilon..sub.1 /.epsilon..sub.2 is represented on the ordinate and the function (2.pi./80 ).multidot.h on the abscissa, where .lambda. represents the wavelength of the elastic surface wave. As a result, the energy of the elastic surface waves is propagated from the input transducer to the output transducer with a sufficiently large power.

摘要翻译： 弹性表面波装置包括介电常数为ε2的压电基片，介电常数ε为1且厚度为h的电介质膜，并沉积在压电基片上，以及数字型输入输出传感器 形成在电介质膜上。 选择介电常数ε1 /ε2与与电介质膜的厚度成比例的函数2π/λ×h的比率以满足在由坐标点P（ε1 /ε 2 = 1/5，（2π/λ）×h = 0.1），Q（ε1 /ε2 = 1/5，（2π/λ）×h = 0.00016），R（ε1 /ε2 = 500，（2π/λ）xh = 0.0004）和S（ε1 /ε2 = 1/500，（2 pi /λ）xh = 0.006），其中ε1 / 纵坐标和横坐标上的函数（2 pi / 80）xh，其中λ表示弹性表面波的波长。 结果，弹性表面波的能量以足够大的功率从输入传感器传播到输出换能器。

公开(公告)号：US4772520A

公开(公告)日：1988-09-20

申请号：US22609

申请日：1987-03-04

申请人： Shouzo Takeno ,  Hideki Matsui ,  Kazushige Sasaki

发明人： Shouzo Takeno ,  Hideki Matsui ,  Kazushige Sasaki

IPC分类号： H01C17/12 ,  B41J2/315 ,  B41J2/335 ,  C23C14/08 ,  H01C7/00 ,  H05B1/00

CPC分类号： B41J2/33515 ,  B41J2/3355 ,  B41J2/3357 ,  B41J2/3359 ,  C23C14/08

摘要： This invention discloses a thermal head having a resistive layer of a thin Ta-Si-O film containing more than 45 mol % and at most 75 mol % of a silicon oxide in terms of SiO.sub.2, and a method of manufacturing a thermal head by sputtering a sintered target in vacuum atmosphere at an argon gas partial pressure of 10.times.10.sup.-3 Torr to 80.times.10.sup.-3 Torr so as to obtain the resistive layer.

摘要翻译： 本发明公开了一种热敏头，其具有包含SiO 2以上的氧化硅多于45摩尔％且最多75摩尔％的薄Ta-Si-O膜的电阻层，以及通过溅射法制造热敏头的方法 在氩气分压为10×10 -3 Torr至80×10 -3 Torr的真空气氛中烧结靶材，以获得电阻层。