公开(公告)号：US20090013801A1

公开(公告)日：2009-01-15

申请号：US12217899

申请日：2008-07-09

申请人： Shuichi Yamashita ,  Masashi Totokawa ,  Masao Naitou ,  Tetsuo Imamura ,  Kenji Morikawa ,  Takuji Iwano

发明人： Shuichi Yamashita ,  Masashi Totokawa ,  Masao Naitou ,  Tetsuo Imamura ,  Kenji Morikawa ,  Takuji Iwano

IPC分类号： G01L1/22

CPC分类号： G01L1/20 ,  G01L1/2287

摘要： A physical quantity sensor element includes a strain sensitive resistor and an electrically insulating material. The strain sensitive resistor has an electrical resistance value changeable in response to a change of a strain level generated by application of a stress. The electrically insulating material is bonded to the strain sensitive resistor, the electrically insulating material having an electrically insulating property. The strain sensitive resistor includes (a) a matrix including a glass and (b) electrically conductive particles that are dispersed in the glass. The glass is free of lead and includes bismuth.

摘要翻译： 物理量传感器元件包括应变敏感电阻器和电绝缘材料。 应变敏感电阻器具有响应于通过施加应力产生的应变水平的变化而改变的电阻值。 电绝缘材料结合到应变敏感电阻器，电绝缘材料具有电绝缘性能。 应变敏感电阻器包括（a）包括玻璃的基体和（b）分散在玻璃中的导电颗粒。 玻璃不含铅，包括铋。

公开(公告)号：US5132545A

公开(公告)日：1992-07-21

申请号：US568191

申请日：1990-08-16

申请人： Kazuhiro Shono ,  Shigeo Sasaki ,  Susumu Katoh ,  Masao Naitou ,  Tetsuya Nakanishi ,  Naomitsu Fujishita ,  Kazuhiko Noguchi ,  Masayasu Tanjo

发明人： Kazuhiro Shono ,  Shigeo Sasaki ,  Susumu Katoh ,  Masao Naitou ,  Tetsuya Nakanishi ,  Naomitsu Fujishita ,  Kazuhiko Noguchi ,  Masayasu Tanjo

IPC分类号： H01J37/302 ,  H01J37/317

CPC分类号： H01J37/302 ,  H01J37/3171 ,  H01J2237/24542

摘要： An ion implantation apparatus includes an ion source having an arc chamber generating ions and a drawing electrode drawing ions from the arc chamber, a mass separator transporting only ions desired for implantation, an ion implantation chamber in which the material to be implanted by ions is placed, and a controller means for automatically controlling the distance between the arc chamber and the drawing electrode incrementally in accordance with a theoretical calculation using normalized perveance considering the kind of ions to be implanted, the accelerating voltage, and the ion current and current density distribution.