Method Of Forming A Device With FINFET Split Gate Non-volatile Memory Cells And FINFET Logic Devices

    公开(公告)号:US20210272973A1

    公开(公告)日:2021-09-02

    申请号:US16803876

    申请日:2020-02-27

    Abstract: A method of forming a device with a silicon substrate having upwardly extending first and second fins. A first implantation forms a first source region in the first silicon fin. A second implantation forms a first drain region in the first silicon fin, and second source and drain regions in the second silicon fin. A first channel region extends between the first source and drain regions. A second channel region extends between the second source and drain regions. A first polysilicon deposition is used to form a floating gate that wraps around a first portion of the first channel region. A second polysilicon deposition is used to form an erase gate wrapping around first source region, a word line gate wrapping around a second portion of the first channel region, and a dummy gate wrapping around the second channel region. The dummy gate is replaced with a metal gate.

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