公开(公告)号：US11114451B1

公开(公告)日：2021-09-07

申请号：US16803876

申请日：2020-02-27

Applicant: Silicon Storage Technology, Inc.

Inventor： Feng Zhou ,  Xian Liu ,  JinHo Kim ,  Serguei Jourba ,  Catherine Decobert ,  Nhan Do

IPC: H01L27/11534 ,  H01L27/11521 ,  H01L29/423 ,  H01L27/11517 ,  H01L29/66

Abstract: A method of forming a device with a silicon substrate having upwardly extending first and second fins. A first implantation forms a first source region in the first silicon fin. A second implantation forms a first drain region in the first silicon fin, and second source and drain regions in the second silicon fin. A first channel region extends between the first source and drain regions. A second channel region extends between the second source and drain regions. A first polysilicon deposition is used to form a floating gate that wraps around a first portion of the first channel region. A second polysilicon deposition is used to form an erase gate wrapping around first source region, a word line gate wrapping around a second portion of the first channel region, and a dummy gate wrapping around the second channel region. The dummy gate is replaced with a metal gate.

公开(公告)号：US20210272973A1

公开(公告)日：2021-09-02

申请号：US16803876

申请日：2020-02-27

Applicant: Silicon Storage Technology, Inc.

Inventor： Feng Zhou ,  Xian Liu ,  JinHo Kim ,  Serguei Jourba ,  Catherine Decobert ,  Nhan Do

IPC: H01L27/11534 ,  H01L27/11521

Abstract: A method of forming a device with a silicon substrate having upwardly extending first and second fins. A first implantation forms a first source region in the first silicon fin. A second implantation forms a first drain region in the first silicon fin, and second source and drain regions in the second silicon fin. A first channel region extends between the first source and drain regions. A second channel region extends between the second source and drain regions. A first polysilicon deposition is used to form a floating gate that wraps around a first portion of the first channel region. A second polysilicon deposition is used to form an erase gate wrapping around first source region, a word line gate wrapping around a second portion of the first channel region, and a dummy gate wrapping around the second channel region. The dummy gate is replaced with a metal gate.