公开(公告)号：US20210327512A1

公开(公告)日：2021-10-21

申请号：US17074103

申请日：2020-10-19

Applicant: Silicon Storage Technology, Inc.

Inventor： Leo XING ,  Chunming WANG ,  Xian LIU ,  Nhan DO ,  Guangming LIN ,  Yaohua ZHU

IPC: G11C16/12 ,  G11C16/14 ,  G11C16/26

Abstract: The present invention relates to a flash memory device that uses strap cells in a memory array of non-volatile memory cells as source line pull down circuits. In one embodiment, the strap cells are erase gate strap cells. In another embodiment, the strap cells are source line strap cells. In another embodiment, the strap cells are control gate strap cells. In another embodiment, the strap cells are word line strap cells.