公开(公告)号：US5458732A

公开(公告)日：1995-10-17

申请号：US188653

申请日：1994-01-28

申请人： Stephanie W. Butler ,  Keith J. Brankner

发明人： Stephanie W. Butler ,  Keith J. Brankner

IPC分类号： H01J37/32 ,  H01L21/66 ,  G01R29/00

CPC分类号： B24B37/013 ,  H01J37/32174 ,  H01J37/32935 ,  H01L22/26

摘要： A plasma processing system 10 for fabricating a semiconductor wafer 24 is disclosed. The system includes a plasma processing tool 12 and an RF energy source 20 coupled to the plasma processing tool 12. An optional matching network 22 may be included between the RF energy source 20 and the plasma processing tool 12. Circuitry 18 for monitoring the RF energy to obtain a measurement characteristic is also provided. At least one transducer 14 or 16 is coupled between the plasma processing tool 12 and the circuitry 18 for monitoring the RF energy. The RF energy is typically applied at a fundamental frequency and the electrical characteristic is monitored at a second frequency different than the fundamental frequency. Also included is circuitry 19, such as a computer, for interpreting the measurement to determine a condition of the processing system 10. Other systems and methods are also disclosed.

摘要翻译： 公开了一种用于制造半导体晶片24的等离子体处理系统10。 该系统包括等离子体处理工具12和耦合到等离子体处理工具12的RF能量源20.可选的匹配网络22可以包括在RF能量源20和等离子体处理工具12之间。用于监测RF能量的电路18 也提供了测量特性。 至少一个换能器14或16耦合在等离子体处理工具12和电路18之间，用于监测RF能量。 RF能量通常以基本频率施加，并且以与基本频率不同的第二频率监测电特性。 还包括诸如计算机的电路19，用于解释测量以确定处理系统10的状况。还公开了其它系统和方法。

公开(公告)号：US06573194B2

公开(公告)日：2003-06-03

申请号：US09921225

申请日：2001-08-02

申请人： Keith J. Brankner ,  Wei-Yan Shih

发明人： Keith J. Brankner ,  Wei-Yan Shih

IPC分类号： H01L2131

CPC分类号： H01L21/0234 ,  H01L21/02178 ,  H01L21/02332 ,  H01L21/318 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76852 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76888

摘要： An integrated circuit having an interconnect layer (104) that comprises a first barrier layer (106) and an aluminum-based layer (108) overlying the first barrier layer (106). An aluminum-nitride layer (112) is located on the surface of the aluminum-based layer (108). AlN layer (112) is formed by converting a native aluminum-oxide layer to AlN using a plasma with H2 and N2 supplied independently rather than supplied together in the form of ammonia.

公开(公告)号：US5928964A

公开(公告)日：1999-07-27

申请号：US769680

申请日：1996-12-18

申请人： Keith J. Brankner

发明人： Keith J. Brankner

IPC分类号： H01L21/311 ,  H01L21/318 ,  H01L21/762 ,  C01B33/00 ,  C07F7/02

CPC分类号： H01L21/31116 ,  H01L21/76202 ,  H01L21/3185

摘要： A system and method is provided for anisotropically etching a silicon nitride layer (12) in an ion-assisted plasma reactor. A chuck (34) supports a photoresist layer (10), the silicon nitride layer (12), and a semiconductor water (14). A chuck temperature controller (36) is provided for adjusting the temperature of the chuck (34) to either increase or decrease the etch bias of the silicon nitride layer (12) to achieve an optimal etch bias.

摘要翻译： 提供了一种用于在离子辅助等离子体反应器中各向异性蚀刻氮化硅层（12）的系统和方法。 卡盘（34）支撑光致抗蚀剂层（10），氮化硅层（12）和半导体水（14）。 提供了一种卡盘温度控制器（36），用于调节卡盘（34）的温度以增加或减少氮化硅层（12）的蚀刻偏压，以获得最佳蚀刻偏压。