Method and Apparatus for Preventing Galvanic Corrosion in Semiconductor Processing
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    发明申请
    Method and Apparatus for Preventing Galvanic Corrosion in Semiconductor Processing 审中-公开
    用于防止半导体加工中电镀腐蚀的方法和装置

    公开(公告)号:US20090223832A1

    公开(公告)日:2009-09-10

    申请号:US12350095

    申请日:2009-01-07

    IPC分类号: C25F1/00 C25F7/00

    摘要: The present invention is related to a method and apparatus for cleaning a semiconductor substrate including on a surface of the substrate at least one structure comprising a first conducting or semiconducting material, surrounded by a layer of a second conducting or semiconducting material, said layer essentially extending over the totality of said surface, the first and second material being in physical contact, the method comprising the steps of: providing the substrate, positioning a counter-electrode facing the substrate surface, and supplying an electrolytic fluid to the space between the surface and the electrode, the counter-electrode acting as an anode in the galvanic cell defined by the substrate surface, the cleaning fluid and the counter-electrode.

    摘要翻译: 本发明涉及一种用于清洁半导体衬底的方法和装置,所述方法和装置包括在所述衬底的表面上,所述衬底的至少一个结构包括由第二导电或半导体材料层围绕的第一导电或半导体材料,所述层基本上延伸 在所述表面的整体上,所述第一和第二材料物理接触,所述方法包括以下步骤:提供所述基板,定位面对所述基板表面的对置电极,以及将电解液供应到所述表面和 电极,作为由基板表面限定的原电池中的阳极的对电极,清洁流体和对电极。