公开(公告)号：US20170345721A1

公开(公告)日：2017-11-30

申请号：US15167010

申请日：2016-05-27

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Ming-Heng TSAI ,  Chun-Sheng LIANG ,  Pei-Lin WU ,  Yi-Ren CHEN ,  Shih-Hsun CHANG

IPC分类号： H01L21/8238 ,  H01L29/267 ,  H01L29/24 ,  H01L29/161 ,  H01L29/16 ,  H01L29/08 ,  H01L27/092 ,  H01L29/78 ,  H01L29/165

CPC分类号： H01L21/823814 ,  H01L21/823418 ,  H01L21/823425 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/24 ,  H01L29/267 ,  H01L29/7848 ,  H01L29/785

摘要： A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a gate stack over the substrate. The gate stack has a first upper portion and a first lower portion, and the first upper portion is wider than the first lower portion. The semiconductor device structure includes a spacer layer surrounding the gate stack. The spacer layer has a second upper portion and a second lower portion. The second upper portion is thinner than the second lower portion.

公开(公告)号：US20190334013A1

公开(公告)日：2019-10-31

申请号：US16504727

申请日：2019-07-08

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Ming-Heng TSAI ,  Chun-Sheng LIANG ,  Kuo-Hua PAN

IPC分类号： H01L29/66 ,  H01L29/78

摘要： A method for manufacturing a semiconductor device includes forming a shallow trench isolation (STI) structure surrounding a pair of semiconductor fins; forming a dummy gate layer over the STI structure and the semiconductor fins; etching a first portion of the dummy gate layer to form a trench through the dummy gate layer until the STI structure is exposed, in which the trench extends between the semiconductor fins along a lengthwise direction of the semiconductor fins; forming an insulating structure in the trench through the dummy gate layer; after forming the insulating structure extending through the dummy gate layer, patterning the dummy gate layer to form a pair of dummy gate structures each of which is across a respective one of the semiconductor fins; and replacing the dummy gate structures with a pair of metal gate structures.

公开(公告)号：US20190109051A1

公开(公告)日：2019-04-11

申请号：US16196642

申请日：2018-11-20

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Ming-Heng TSAI ,  Chun-Sheng LIANG ,  Pei-Lin WU ,  Yi-Ren CHEN ,  Shih-Hsun CHANG

IPC分类号： H01L21/8238 ,  H01L29/78 ,  H01L29/267 ,  H01L29/24 ,  H01L29/165 ,  H01L29/16 ,  H01L29/161 ,  H01L21/8234 ,  H01L29/08

摘要： A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a gate stack over the substrate. The gate stack has a first upper portion and a first lower portion, and the first upper portion is wider than the first lower portion. The semiconductor device structure includes a spacer layer surrounding the gate stack. The spacer layer has a second upper portion and a second lower portion. The second upper portion is thinner than the second lower portion.