公开(公告)号：US20220059753A1

公开(公告)日：2022-02-24

申请号：US17274897

申请日：2019-09-11

Applicant: TDK Corporation ,  TOKYO INSTITUTE OF TECHNOLOGY

Inventor： Yusuke SATO ,  Mirai ISHIDA ,  Wakiko SATO ,  Hiroshi FUNAKUBO ,  Takao SHIMIZU ,  Miyu HASEGAWA ,  Keisuke ISHIHAMA

IPC: H01L41/187 ,  H01L41/08 ,  H01L41/316 ,  H01L41/319 ,  C04B35/475 ,  G11B5/127 ,  G01C19/5607 ,  G01L1/16 ,  B41J2/14

Abstract: Provided is a dielectric thin film including a metal oxide. The metal oxide includes bismuth, sodium, barium, and titanium, at least a part of the metal oxide is a tetragonal crystal having a perovskite structure, and a (100) plane of at least a part of the tetragonal crystal is oriented in a normal direction do of a surface of the dielectric thin film 3.

公开(公告)号：US20250069814A1

公开(公告)日：2025-02-27

申请号：US18841735

申请日：2023-01-26

Applicant: TDK CORPORATION

Inventor： Miyu HASEGAWA ,  Daiki ISHII

IPC: H01G4/33 ,  H01G2/06 ,  H01G4/232

Abstract: To provide a thin film capacitor having a large capacitance. A thin film capacitor includes a metal foil having roughened main surfaces, a dielectric film covering the main surfaces, an electrode layer contacting the metal foil through an opening formed in the dielectric film and having a surface formed as a metal terminal, an electrode layer contacting the dielectric film without contacting the metal foil and having a surface formed as a metal terminal, and an electrode layer contacting the dielectric film without contacting the metal foil. The electrode layers include a conductive polymer layer contacting the dielectric film.