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    THIN FILM CAPACITOR AND ELECTRONIC CIRCUIT MODULE HAVING THE SAME
    3.
    发明申请
    THIN FILM CAPACITOR AND ELECTRONIC CIRCUIT MODULE HAVING THE SAME 有权

    公开(公告)号：US20220406530A1

    公开(公告)日：2022-12-22

    申请号：US17777515

    申请日：2021-03-22

    Applicant: TDK Corporation

    Inventor： Daiki ISHII ,  Eiko TAMURA

    IPC: H01G4/33 ,  H01G4/012 ,  H01G4/232 ,  H01G2/06

    Abstract: To provide a thin film capacitor capable of achieving low impedance over a wide frequency band. A thin film capacitor includes: a capacitor layer having a structure in which internal electrode layers and dielectric layers are alternately stacked; a redistribution layer stacked on the capacitor layer; and external terminals. The redistribution layer includes a wiring pattern connecting the external terminal and the internal electrode layers and a wiring pattern connecting the external terminal and the internal electrode layers. A distance between first and second via conductors is smaller than distance between second and third via conductors and is smaller than a distance between first and fourth via conductors.

    THIN-FILM CAPACITOR
    4.
    发明申请
    THIN-FILM CAPACITOR 审中-公开

    公开(公告)号：US20190304701A1

    公开(公告)日：2019-10-03

    申请号：US16360405

    申请日：2019-03-21

    Applicant: TDK CORPORATION

    Inventor： Daiki ISHII ,  Kazuhiro YOSHIKAWA ,  Koichi TSUNODA ,  Mitsuhiro TOMIKAWA ,  Junki NAKAMOTO ,  Kenichi YOSHIDA

    IPC: H01G4/33 ,  H01G4/12 ,  H01G4/008

    Abstract: A thin-film capacitor satisfies a relationship of CTE1>CTE2>CTE3 regarding a linear expansion coefficient CTE1 of a base, a linear expansion coefficient CTE2 of a capacitance unit, and a linear expansion coefficient CTE3 of a barrier layer. The inventors have newly found that in a case in which such a relationship is satisfied, when a temperature falls from a deposition temperature, cracking occurring in the capacitance unit of the thin-film capacitor is prevented, and cracking occurring in the barrier layer is also prevented.

    THIN FILM CAPACITOR, ITS MANUFACTURING METHOD, AND ELECTRONIC CIRCUIT SUBSTRATE HAVING THE THIN FILM CAPACITOR
    5.
    发明公开
    THIN FILM CAPACITOR, ITS MANUFACTURING METHOD, AND ELECTRONIC CIRCUIT SUBSTRATE HAVING THE THIN FILM CAPACITOR 审中-公开

    公开(公告)号：US20230335579A1

    公开(公告)日：2023-10-19

    申请号：US18012553

    申请日：2020-12-24

    Applicant: TDK Corporation

    Inventor： Daiki ISHII ,  Yoshihiko YANO ,  Yuki YAMASHITA ,  Kenichi YOSHIDA ,  Tetsuhiro TAKAHASHI

    IPC: H01L23/495 ,  H01L25/16

    CPC classification number: H01L28/84 ,  H01L25/16

    Abstract: A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; a second electrode layer contacting the dielectric film without contacting the metal foil; and an insulating member provided on the upper surface of the metal foil to surround the first and second electrode layers. The metal foil has an outer peripheral area which is positioned outside an area surrounded by the insulating member and which is not covered with the first and second electrode layers. A height of the electrode layer is equal to or higher than a height of the insulating member. This makes the outer peripheral portion of the thin film capacitor have a step-like shape.

    THIN FILM CAPACITOR AND ELECTRONIC CIRCUIT SUBSTRATE HAVING THE SAME
    6.
    发明公开
    THIN FILM CAPACITOR AND ELECTRONIC CIRCUIT SUBSTRATE HAVING THE SAME 审中-公开

    公开(公告)号：US20230260713A1

    公开(公告)日：2023-08-17

    申请号：US18012820

    申请日：2020-12-24

    Applicant: TDK Corporation

    Inventor： Daiki ISHII ,  Yoshihiko YANO ,  Yuki YAMASHITA ,  Kenichi YOSHIDA ,  Tetsuhiro TAKAHASHI

    IPC: H01G4/33 ,  H01G4/228 ,  H01G4/005 ,  H01G4/06

    CPC classification number: H01G4/33 ,  H01G4/228 ,  H01G4/005 ,  H01G4/06

    Abstract: To provide a thin film capacitor having high adhesion with respect to a circuit substrate. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. An angle θa formed by the other main surface of the metal foil and a side surface thereof is more than 20° and less than 80°. The side surface is thus tapered at an angle of more than 20° and less than 80°, so that it is possible to suppress warpage and to enhance adhesion with respect to a multilayer substrate when the thin film capacitor is embedded in the multilayer substrate.

    THIN FILM CAPACITOR AND MANUFACTURING METHOD THEREOF
    8.
    发明申请
    THIN FILM CAPACITOR AND MANUFACTURING METHOD THEREOF 审中-公开

    公开(公告)号：US20190287726A1

    公开(公告)日：2019-09-19

    申请号：US16354373

    申请日：2019-03-15

    Applicant: TDK Corporation

    Inventor： Kazuhiro YOSHIKAWA ,  Daiki ISHII ,  Kenichi YOSHIDA

    IPC: H01G4/33 ,  H01G4/30 ,  H01G4/012 ,  H01G4/06

    Abstract: A thin film capacitor includes a capacitance portion in which a plurality of electrode layers and dielectric layers are alternately laminated, a cover layer, an insulating layer, a via hole in which one electrode layer different from an uppermost electrode layer among the plurality of electrode layers is exposed at a bottom surface thereof, and an opening which is provided inside the via hole and in which the one electrode layer is exposed at a bottom surface thereof, and in which the cover layer and the insulating layer are exposed at a side surface. The opening includes a first opening portion which passes through the insulating layer and a second opening portion which is provided below the first opening portion and passes through the cover layer, and when an inner diameter of the first opening portion is D1 and an inner diameter of the second opening portion is D2, D1>D2.

    THIN FILM CAPACITOR AND ELECTRONIC CIRCUIT SUBSTRATE HAVING THE SAME
    10.
    发明公开
    THIN FILM CAPACITOR AND ELECTRONIC CIRCUIT SUBSTRATE HAVING THE SAME 审中-公开

    公开(公告)号：US20230260698A1

    公开(公告)日：2023-08-17

    申请号：US18012834

    申请日：2020-12-24

    Applicant: TDK Corporation

    Inventor： Daiki ISHII ,  Yoshihiko YANO ,  Yuki YAMASHITA ,  Kenichi YOSHIDA ,  Tetsuhiro TAKAHASHI

    IPC: H01G4/01 ,  H01L25/16 ,  H01G4/33

    CPC classification number: H01G4/01 ,  H01L25/16 ,  H01G4/33 ,  H01L24/16

    Abstract: To provide a thin film capacitor having high flexibility. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. The particle diameter of crystal at a non-roughened center part of the metal foil is less than 15 μm in the planar direction and less than 5 μm in the thickness direction. This can not only enhance the flexibility of the metal foil to reduce a short-circuit failure in a state where the thin film capacitor is incorporated in a multilayer substrate but also enhance positional accuracy.

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