公开(公告)号：US3798135A

公开(公告)日：1974-03-19

申请号：US3798135D

申请日：1972-05-03

Applicant: TEXAS INSTRUMENTS INC

Inventor： PADDOCK A ,  MORRISON W ,  BRACKEN R ,  HARPER J

IPC: H01L21/301 ,  H01L21/00 ,  H01L21/283 ,  H01L21/306 ,  H01L21/316 ,  H01L21/3205 ,  H01L23/29 ,  H01L23/522 ,  C23B5/48 ,  H01L11/00

CPC classification number: H01L23/293 ,  H01L21/00 ,  H01L21/31687 ,  H01L23/522 ,  H01L2924/0002 ,  H01L2924/00

Abstract: ANODIC OXIDATION IS EMPLOYED IN THE FABRICATION OF INTEGRATED CIRCUITS TO PROVIDE PASSIVATION AND PROTECTION FROM ABRASION. IN ONE RESPECT OF THE INVENTION THE ANODIZED PASSIVATING LAYER IS SELECTIVELY ETCHED TO EXPOSE BONDNG PADS AND SCRIBE LINE AREAS. IN A DIFFERENT ASPECT OF THE INVENTION A METHOD FOR FABRICATING A MULTILEVEL INTERCONNECTED INTEGRATED CIRCUIT IS PROVIDED WHEREIN A LAYER OF ANOIDIC OXIDE IS FORMED TO COVER THE FIRST LEVEL OF INTERCONNECTS. A LAYER OF INSULATINNG MATERIAL IS THEN DEPOSTED OVER THE ANODIC OXIDE LAYER TO ADVANTAGEOUSLY REDUCE INTERLEVEL CAPACITANCE. FIRST LEVEL BONDING PADS AND SCRIBE LINE AREAS ARE EXPOSED. A CONDUCTIVE LAYER IS THEN DEPOSITED AND PATTERNED TO FORM THE SECOND LEVEL INTERCONNECTED PATTERN. THIS SECOND LEVEL INTERCONNECT MAY ALSO BE PROTECTED BY AN ANODIC OXIDATION OVERLAYER, IF DESIRED.