公开(公告)号：US20230005807A1

公开(公告)日：2023-01-05

申请号：US17931828

申请日：2022-09-13

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Nazila Dadvand ,  Keith Edward Johnson ,  Christopher Daniel Manack ,  Salvatore Frank Pavone

IPC: H01L23/31 ,  H01L23/00 ,  H01L21/56 ,  H01L23/538 ,  H01L23/498 ,  H01L25/065

Abstract: A device includes a semiconductor die including a via, a layer of titanium tungsten (TiW) in contact with the via, and a copper pillar including a top portion and a bottom portion. The bottom portion is in contact with the layer of TiW. The copper pillar includes interdiffused zinc within the bottom portion.

公开(公告)号：US20190109062A1

公开(公告)日：2019-04-11

申请号：US15909679

申请日：2018-03-01

Applicant: Texas Instruments Incorporated

Inventor： Nazila Dadvand ,  Keith Edward Johnson ,  Christopher Daniel Manack ,  Salvatore Frank Pavone

IPC: H01L23/31 ,  H01L23/498 ,  H01L23/538 ,  H01L23/00 ,  H01L25/065

Abstract: A method for fabricating a copper pillar. The method includes forming a layer of titanium tungsten (TiW) over a semiconductor wafer, forming a layer of zinc (Zn) over the layer of TiW, and forming a copper pillar over the via. In addition, the method includes performing an anneal to diffuse the layer of Zn into the copper pillar. A semiconductor device that includes a layer of TiW coupled to a via of a semiconductor wafer and a copper pillar coupled to the layer of TiW. The copper pillar has interdiffused Zn within its bottom portion. Another method for fabricating a copper pillar includes forming a layer of TiW over a semiconductor wafer, forming a first patterned photoresist, forming a layer of Zn, and then removing the first patterned photoresist. The method further includes forming a second patterned photoresist and forming a copper pillar.

公开(公告)号：US20200286844A1

公开(公告)日：2020-09-10

申请号：US16292975

申请日：2019-03-05

Applicant: Texas Instruments Incorporated

Inventor： Keith Edward Johnson ,  Nazila Dadvand

IPC: H01L23/00 ,  H05K1/11 ,  H05K3/10 ,  H05K3/24

Abstract: In a described example, a method is described including: depositing a zinc seed layer on a substrate; forming a photoresist pattern on the zinc seed layer, with openings in the photoresist pattern exposing portions of the zinc seed layer; electroplating a copper structure onto the exposed portions of the zinc seed layer; stripping the photoresist; annealing the substrate to form copper/zinc alloy between the copper structure and the substrate; and etching away the unreacted portions of the zinc seed layer.

公开(公告)号：US11443996B2

公开(公告)日：2022-09-13

申请号：US15909679

申请日：2018-03-01

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Nazila Dadvand ,  Keith Edward Johnson ,  Christopher Daniel Manack ,  Salvatore Frank Pavone

IPC: H01L23/31 ,  H01L23/498 ,  H01L23/538 ,  H01L25/065 ,  H01L23/00 ,  H01L21/56

Abstract: A method for fabricating a copper pillar. The method includes forming a layer of titanium tungsten (TiW) over a semiconductor wafer, forming a layer of zinc (Zn) over the layer of TiW, and forming a copper pillar over the via. In addition, the method includes performing an anneal to diffuse the layer of Zn into the copper pillar. A semiconductor device that includes a layer of TiW coupled to a via of a semiconductor wafer and a copper pillar coupled to the layer of TiW. The copper pillar has interdiffused Zn within its bottom portion. Another method for fabricating a copper pillar includes forming a layer of TiW over a semiconductor wafer, forming a first patterned photoresist, forming a layer of Zn, and then removing the first patterned photoresist. The method further includes forming a second patterned photoresist and forming a copper pillar.