公开(公告)号：US20230049751A1

公开(公告)日：2023-02-16

申请号：US17402287

申请日：2021-08-13

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Rahmi HEZAR ,  Henry Litzmann EDWARDS ,  Miaad ALIROTEH ,  Srinath Mathur RAMASWAMY ,  Baher HAROUN ,  Gerd SCHUPPENER

IPC: H01L31/02 ,  H01L31/107 ,  G01S7/4861

Abstract: A sensor chip includes a sensor pixel. The sensor pixel includes an avalanche photodetector. A circuit is adjacent to the avalanche photodetector. The circuit is coupled to the avalanche photodetector. An isolation structure at least partially encloses the circuit and is between the avalanche photodetector and the circuit.

公开(公告)号：US20220037540A1

公开(公告)日：2022-02-03

申请号：US17347822

申请日：2021-06-15

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Gerd SCHUPPENER ,  Miaad ALIROTEH ,  Srinath RAMASWAMY ,  Baher HAROUN

IPC: H01L31/02 ,  H01L31/107 ,  H03F3/08 ,  H04B10/69

Abstract: An avalanche photo-diode (APD) circuit includes a first APD and a bias circuit. The first APD is configured to detect light. The bias circuit is configured to control a gain of the first APD. The bias circuit includes a second APD, a reference voltage source, a bias voltage generation circuit, and a metal layer configured to shield the second APD from the light. The reference voltage source is configured to bias the second APD. The bias voltage generation circuit is configured to generate a bias voltage for biasing the first APD based on dark current output by the second APD.