公开(公告)号：US20230049751A1

公开(公告)日：2023-02-16

申请号：US17402287

申请日：2021-08-13

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Rahmi HEZAR ,  Henry Litzmann EDWARDS ,  Miaad ALIROTEH ,  Srinath Mathur RAMASWAMY ,  Baher HAROUN ,  Gerd SCHUPPENER

IPC: H01L31/02 ,  H01L31/107 ,  G01S7/4861

Abstract: A sensor chip includes a sensor pixel. The sensor pixel includes an avalanche photodetector. A circuit is adjacent to the avalanche photodetector. The circuit is coupled to the avalanche photodetector. An isolation structure at least partially encloses the circuit and is between the avalanche photodetector and the circuit.

公开(公告)号：US20220406956A1

公开(公告)日：2022-12-22

申请号：US17680981

申请日：2022-02-25

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Swaminathan SANKARAN ,  Baher HAROUN ,  Gerd SCHUPPENER ,  Scott Robert SUMMERFELT ,  Benjamin COOK

IPC: H01L31/173 ,  H01L49/02

Abstract: An integrated circuit (IC) includes a substrate having a first surface and a second surface opposite the first surface. The substrate has a first region containing a first circuit and a second region containing a second circuit. The first circuit operates at a first supply voltage. The second circuit operates at a second supply voltage. The second supply voltage is higher than the first supply voltage. The IC includes a through wafer trench (TWT) extending from the first surface of the substrate to the second surface of the semiconductor substrate. The TWT separates the first region from the second region. A dielectric material is in the TWT. An interconnect region has layers of dielectric on the first surface of the substrate. The interconnect region is continuous over the first region, the second region, and the TWT. A non-galvanic communication channel is between the first and second circuits.

公开(公告)号：US20220037540A1

公开(公告)日：2022-02-03

申请号：US17347822

申请日：2021-06-15

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Gerd SCHUPPENER ,  Miaad ALIROTEH ,  Srinath RAMASWAMY ,  Baher HAROUN

IPC: H01L31/02 ,  H01L31/107 ,  H03F3/08 ,  H04B10/69

Abstract: An avalanche photo-diode (APD) circuit includes a first APD and a bias circuit. The first APD is configured to detect light. The bias circuit is configured to control a gain of the first APD. The bias circuit includes a second APD, a reference voltage source, a bias voltage generation circuit, and a metal layer configured to shield the second APD from the light. The reference voltage source is configured to bias the second APD. The bias voltage generation circuit is configured to generate a bias voltage for biasing the first APD based on dark current output by the second APD.