公开(公告)号：US09395253B2

公开(公告)日：2016-07-19

申请号：US13931799

申请日：2013-06-28

Applicant: Texas Instruments Incorporated

Inventor： Mikel K. Ash ,  Xiao Pu ,  Joonsung Park ,  Krishnaswamy Nagaraj

IPC: G01K15/00 ,  G01K7/00 ,  H03M3/00 ,  G01K7/01

CPC classification number: G01K15/005 ,  G01K7/01 ,  G01K2219/00

Abstract: A temperature sensor uses a semiconductor device that has a known voltage drop characteristic that is proportional to absolute temperature (PTAT). A controllable current source is coupled to the semiconductor device and is operable to sequentially inject a bias current having a value I(bias) and fixed ratio N of I(bias) into the semiconductor device. A delta sigma analog to digital converter (ADC) has an input coupled to the semiconductor device. The delta sigma ADC is configured to sample and integrate a sequence of voltages pairs produced across the semiconductor device by repeatedly injecting an ordered sequence of selected bias currents into the semiconductor device. The ordered sequence of selected bias currents comprises M repetitions of (N×I(bias); I(bias)) and one repetition of (M×I(bias); M×N×I(bias)).

Abstract translation: 温度传感器使用具有与绝对温度（PTAT）成比例的已知电压降特性的半导体器件。 可控电流源耦合到半导体器件，并且可操作地将具有值I（偏置）和I（偏压）的固定比率N的偏置电流顺序地注入到半导体器件中。 ΔΣ模数转换器（ADC）具有耦合到半导体器件的输入。 ΔΣADC被配置为通过将选择的偏置电流的有序序列重复地注入到半导体器件中来对半导体器件产生的电压对序列进行采样和积分。 选择的偏置电流的有序序列包括（N×I（偏置）; I（偏置））和（M×I（偏置）; M×N×I（偏置））的一次重复的M次重复。

公开(公告)号：US09335223B2

公开(公告)日：2016-05-10

申请号：US13866301

申请日：2013-04-19

Applicant: Texas Instruments Incorporated

Inventor： Mikel K. Ash ,  Krishnaswamy Nagaraj ,  Paul Kimelman ,  Steve Vu

IPC: G01K7/01 ,  G01K7/16

CPC classification number: G01K7/01

Abstract: Methods and circuits for measuring the temperature of a transistor are disclosed. An embodiment of the method includes, providing a current into a circuit, wherein the circuit is connected to the transistor. A variable resistance is connected between the base and collector of the transistor. The circuit has a first mode and a second mode, wherein the current in the first mode flows into the base of the transistor and through the resistance and the current in the second mode flows into the emitter of the transistor. Voltages in both the first mode and the second mode are measured using different resistance settings. The temperature of the transistor is calculated based on the difference between the different voltages.

Abstract translation: 公开了用于测量晶体管的温度的方法和电路。 该方法的实施例包括：向电路提供电流，其中电路连接到晶体管。 可变电阻连接在晶体管的基极和集电极之间。 电路具有第一模式和第二模式，其中第一模式中的电流流入晶体管的基极并通过电阻，并且第二模式中的电流流入晶体管的发射极。 使用不同的电阻设置来测量第一模式和第二模式中的电压。 基于不同电压之间的差值来计算晶体管的温度。

公开(公告)号：US20150003490A1

公开(公告)日：2015-01-01

申请号：US13931799

申请日：2013-06-28

Applicant: Texas Instruments Incorporated

Inventor： Mikel K. Ash ,  Xiao Pu ,  Joonsung Park ,  Krishnaswamy Nagaraj

IPC: G01K15/00

CPC classification number: G01K15/005 ,  G01K7/01 ,  G01K2219/00

Abstract: A temperature sensor uses a semiconductor device that has a known voltage drop characteristic that is proportional to absolute temperature (PTAT). A controllable current source is coupled to the semiconductor device and is operable to sequentially inject a bias current having a value I(bias) and fixed ratio N of I(bias) into the semiconductor device. A delta sigma analog to digital converter (ADC) has an input coupled to the semiconductor device. The delta sigma ADC is configured to sample and integrate a sequence of voltages pairs produced across the semiconductor device by repeatedly injecting an ordered sequence of selected bias currents into the semiconductor device. The ordered sequence of selected bias currents comprises M repetitions of (N×I(bias); I(bias)) and one repetition of (M×I(bias); M×N×I(bias)).

Abstract translation: 温度传感器使用具有与绝对温度（PTAT）成比例的已知电压降特性的半导体器件。 可控电流源耦合到半导体器件，并且可操作地将具有值I（偏置）和I（偏压）的固定比率N的偏置电流顺序地注入到半导体器件中。 ΔΣ模数转换器（ADC）具有耦合到半导体器件的输入。 ΔΣADC被配置为通过将选择的偏置电流的有序序列重复地注入到半导体器件中来对半导体器件产生的电压对序列进行采样和积分。 选择的偏置电流的有序序列包括（N×I（偏置）; I（偏置））和（M×I（偏置）; M×N×I（偏置））的一次重复的M次重复。

公开(公告)号：US20140314124A1

公开(公告)日：2014-10-23

申请号：US13866301

申请日：2013-04-19

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Mikel K. Ash ,  Krishnaswamy Nagaraj ,  Paul Kimelman ,  Steve Vu

IPC: G01K7/18

CPC classification number: G01K7/01

Abstract: Methods and circuits for measuring the temperature of a transistor are disclosed. An embodiment of the method includes, providing a current into a circuit, wherein the circuit is connected to the transistor. A variable resistance is connected between the base and collector of the transistor. The circuit has a first mode and a second mode, wherein the current in the first mode flows into the base of the transistor and through the resistance and the current in the second mode flows into the emitter of the transistor. Voltages in both the first mode and the second mode are measured using different resistance settings. The temperature of the transistor is calculated based on the difference between the different voltages.

Abstract translation: 公开了用于测量晶体管的温度的方法和电路。 该方法的实施例包括：向电路提供电流，其中电路连接到晶体管。 可变电阻连接在晶体管的基极和集电极之间。 电路具有第一模式和第二模式，其中第一模式中的电流流入晶体管的基极并通过电阻，并且第二模式中的电流流入晶体管的发射极。 使用不同的电阻设置来测量第一模式和第二模式中的电压。 基于不同电压之间的差值来计算晶体管的温度。