Internal device sequencer for testing mode

    公开(公告)号:US11614479B2

    公开(公告)日:2023-03-28

    申请号:US17409633

    申请日:2021-08-23

    Abstract: A device includes FETs with control terminals. A gate driver circuit causes the FETs to turn on and to enter a high-impedance state in response to an OCP signal. A current sense circuit senses an FET current through the FETs and sends the OCP signal to the gate driver circuit when the FET current exceeds an OCP current for longer than an OCP deglitch period. A test sequencer, in response to receiving an external test mode signal, sets the OCP current to a preset OCP test current, sets the OCP deglitch period to a preset OCP deglitch test period, and causes the gate driver circuit to turn on the plurality of FETs.

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