公开(公告)号：US20190206741A1

公开(公告)日：2019-07-04

申请号：US15858862

申请日：2017-12-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Anindya PODDAR ,  Usman Mahmood CHAUDHRY ,  Tran Kiet THU ,  Mahmud Halim CHOWDHURY ,  Peter SMEYS

IPC: H01L21/8234 ,  H01L21/762 ,  H01L21/304 ,  H01L27/088 ,  H01L23/31

CPC classification number: H01L21/823481 ,  H01L21/3043 ,  H01L21/76224 ,  H01L21/823425 ,  H01L21/823487 ,  H01L23/3178 ,  H01L27/088

Abstract: In one aspect of the disclosure, an integrated circuit is disclosed. The integrated circuit includes a first FET device formed on a substrate having a first source, a first gate, and a first channel. The first channel is formed in the substrate, connecting the first source to a common drain. The integrated circuit also includes a second FET device formed on the substrate having a second source, a second gate, and a second channel. The second channel is formed in the substrate, connecting the second source to the common drain. A trench is formed in the substrate between the first channel and the second channel.