公开(公告)号：US20230036643A1

公开(公告)日：2023-02-02

申请号：US17390823

申请日：2021-07-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Mahmud Halim CHOWDHURY ,  Amin SIJELMASSI ,  Murali KITTAPPA ,  Anindya PODDAR ,  Honglin GUO ,  Joe Adam GARCIA ,  John Paul TELLKAMP

IPC: H01L23/00 ,  H01H85/02

Abstract: In examples, a package comprises a semiconductor die having a device side and a bond pad on the device side, a conductive terminal exposed to an exterior of the package, and an electrical fuse. The electrical fuse comprises a conductive ball coupled to the bond pad, and a bond wire coupled to the conductive terminal. The bond wire is stitch-bonded to the conductive ball.

公开(公告)号：US20240332243A1

公开(公告)日：2024-10-03

申请号：US18740456

申请日：2024-06-11

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Mahmud Halim CHOWDHURY ,  Amin SIJELMASSI ,  Murali KITTAPPA ,  Anindya PODDAR ,  Honglin GUO ,  Joe Adam GARCIA ,  John Paul TELLKAMP

IPC: H01L23/00 ,  H01H85/02 ,  H01L23/495 ,  H01L23/498

CPC classification number: H01L24/48 ,  H01H85/0241 ,  H01L24/49 ,  H01L24/85 ,  H01H2085/0283 ,  H01L23/49555 ,  H01L23/49827 ,  H01L24/73 ,  H01L2224/4801 ,  H01L2224/48175 ,  H01L2224/48227 ,  H01L2224/48455 ,  H01L2224/4846 ,  H01L2224/48479 ,  H01L2224/48499 ,  H01L2224/49111 ,  H01L2224/494 ,  H01L2224/73265 ,  H01L2224/85051 ,  H01L2224/85186 ,  H01L2224/8534 ,  H01L2924/01013 ,  H01L2924/01079 ,  H01L2924/2064 ,  H01L2924/2075

Abstract: In examples, a package comprises a semiconductor die having a device side and a bond pad on the device side, a conductive terminal exposed to an exterior of the package, and an electrical fuse. The electrical fuse comprises a conductive ball coupled to the bond pad, and a bond wire coupled to the conductive terminal. The bond wire is stitch-bonded to the conductive ball.

公开(公告)号：US20190206741A1

公开(公告)日：2019-07-04

申请号：US15858862

申请日：2017-12-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Anindya PODDAR ,  Usman Mahmood CHAUDHRY ,  Tran Kiet THU ,  Mahmud Halim CHOWDHURY ,  Peter SMEYS

IPC: H01L21/8234 ,  H01L21/762 ,  H01L21/304 ,  H01L27/088 ,  H01L23/31

CPC classification number: H01L21/823481 ,  H01L21/3043 ,  H01L21/76224 ,  H01L21/823425 ,  H01L21/823487 ,  H01L23/3178 ,  H01L27/088

Abstract: In one aspect of the disclosure, an integrated circuit is disclosed. The integrated circuit includes a first FET device formed on a substrate having a first source, a first gate, and a first channel. The first channel is formed in the substrate, connecting the first source to a common drain. The integrated circuit also includes a second FET device formed on the substrate having a second source, a second gate, and a second channel. The second channel is formed in the substrate, connecting the second source to the common drain. A trench is formed in the substrate between the first channel and the second channel.