Cr—Si sintered body, sputtering target, and method for producing thin film

    公开(公告)号:US12173398B2

    公开(公告)日:2024-12-24

    申请号:US17906927

    申请日:2021-03-24

    Abstract: A Cr—Si sintered body contains Cr and Si. The Cr—Si sintered body contains a crystalline CrSi2 phase and a crystalline Si phase. A content of the Si phase in the Cr—Si sintered body is 40% by mass or more. A relative density of the Cr—Si sintered body relative to a true density of the Cr—Si sintered body is 95% or more. The CrSi2 phase has an average crystal grain size of 40 μm or less, and the Si phase has an average crystal grain size of 30 μm or less. A total content of impurities in the Cr—Si sintered body is 200 ppm by mass or less, and the impurities are composed of at least one element selected from the group consisting of Mn, Fe, Mg, Ca, Sr, and Ba.

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