公开(公告)号：US12241147B2

公开(公告)日：2025-03-04

申请号：US17999050

申请日：2021-05-17

Applicant: TOSOH CORPORATION

Inventor： Ryo Akiike ,  Yoichiro Koda ,  Masami Mesuda

IPC: C22C30/00 ,  C01B33/06 ,  C22C24/00 ,  H10N10/851

Abstract: A silicide-based alloy material and a device in which the silicide-based alloy material is used are disclosed. The silicide-based alloy material can reduce environmental impact and provide high thermoelectric FIGURE of merit at room temperature. Provided is a silicide-based alloy material comprising, as major components, silver, barium and silicon, wherein atomic ratios of elements that constitute the alloy material are as follows: 9 at %≤Ag/(Ag+Ba+Si)≤27 at %, 20 at %≤Ba/(Ag+Ba+Si)≤53 at %, and 37 at %≤Si/(Ag+Ba+Si)≤65 at %, where Ag represents a content of the silver, Ba represents a content of the barium and Si represents a content of the silicon, and the silicide-based alloy material has an average grain size of less than or equal to 20 μm.

公开(公告)号：US12247297B2

公开(公告)日：2025-03-11

申请号：US17772972

申请日：2020-10-27

Applicant: TOSOH CORPORATION ,  National Institute for Materials Science

Inventor： Yuya Tsuchida ,  Yuya Suemoto ,  Yoshihiro Ueoka ,  Masami Mesuda ,  Hideto Kuramochi ,  Takahiro Nagata ,  Liwen Sang ,  Toyohiro Chikyow

IPC: H01L21/02 ,  C23C14/00 ,  C23C14/02 ,  C23C14/06 ,  C23C14/34 ,  C23C14/35 ,  C23C28/04 ,  C30B23/02 ,  C30B25/06 ,  C30B25/18 ,  C30B29/40 ,  C30B29/68 ,  H01L29/20 ,  H01L29/205 ,  H01L33/32 ,  H01S5/02

Abstract: The present invention provides: a multilayer film structure which has high crystallinity and planarity; and a method for producing this multilayer film structure. This multilayer film structure is provided with: an Si (111) substrate; a first thin film that is arranged on the Si (111) substrate, while being formed of a nitride material and/or aluminum; and a second thin film that is arranged on the first thin film, while being formed of a nitride material. An amorphous layer having a thickness of 0 nm or more but less than 1.0 nm are present on the Si (111) substrate; and the full width at half maximum (FWHM) of a rocking curve of the (0002) plane at the surface of this multilayer film structure is 1.50° or less.

公开(公告)号：US12173398B2

公开(公告)日：2024-12-24

申请号：US17906927

申请日：2021-03-24

Applicant: TOSOH CORPORATION

Inventor： Hiroyuki Hara ,  Masami Mesuda ,  Ayaka Masuda

IPC: H01J37/34 ,  C23C14/34

Abstract: A Cr—Si sintered body contains Cr and Si. The Cr—Si sintered body contains a crystalline CrSi2 phase and a crystalline Si phase. A content of the Si phase in the Cr—Si sintered body is 40% by mass or more. A relative density of the Cr—Si sintered body relative to a true density of the Cr—Si sintered body is 95% or more. The CrSi2 phase has an average crystal grain size of 40 μm or less, and the Si phase has an average crystal grain size of 30 μm or less. A total content of impurities in the Cr—Si sintered body is 200 ppm by mass or less, and the impurities are composed of at least one element selected from the group consisting of Mn, Fe, Mg, Ca, Sr, and Ba.

公开(公告)号：US11168393B2

公开(公告)日：2021-11-09

申请号：US16206346

申请日：2018-11-30

Applicant: TOSOH CORPORATION

Inventor： Masami Mesuda ,  Keitaro Matsumaru ,  Koyata Takahashi ,  Ryou Kikuchi ,  Tetsuo Shibutami

IPC: C23C14/34 ,  H01J37/34 ,  C04B35/58 ,  C04B35/626 ,  C04B35/645 ,  C04B37/02 ,  C04B41/88 ,  C04B41/00 ,  C04B41/51 ,  C22C29/16

Abstract: The present invention provides a gallium nitride sintered body and a gallium nitride molded article which have high density and low oxygen content without using a special apparatus. According to the first embodiment, a gallium nitride sintered body, which is characterized by having density of 2.5 g/cm3 to less than 5.0 g/cm3 and an intensity ratio of the gallium oxide peak of the (002) plane to the gallium nitride peak of the (002) plane of less than 3%, which is determined by X-ray diffraction analysis, can be obtained. According to the second embodiment, a metal gallium-impregnated gallium nitride molded article, which is characterized by comprising a gallium nitride phase and a metal gallium phase that exist as separate phases and having a molar ratio, Ga/(Ga+N), of 55% to 80%, can be obtained.

公开(公告)号：US12227830B2

公开(公告)日：2025-02-18

申请号：US17996718

申请日：2021-04-19

Applicant: TOSOH CORPORATION

Inventor： Yuya Tsuchida ,  Masami Mesuda ,  Hiroyuki Hara ,  Osamu Matsunaga

IPC: H01J37/34 ,  B22D7/00 ,  C23C14/18 ,  C23C14/34 ,  C23C14/58

Abstract: Provided is an yttrium ingot from which an yttrium sputtering target that produces a reduced number of particles can be obtained, and an yttrium sputtering target that has high plasma resistance and a low resistance that enables realization of a high film deposition rate can be obtained.
An yttrium ingot, wherein the yttrium ingot has a fluorine atom content of less than or equal to 10 wt %; in an instance where the yttrium ingot constitutes a target, a sputtering surface of the target has a surface roughness of 10 nm or greater and 2 μm or less; in the yttrium ingot, the number of pores having a diameter of greater than or equal to 100 μm is fewer than or equal to 0.1/cm2; and the yttrium ingot has a relative density of greater than or equal to 96%.

公开(公告)号：US11802049B2

公开(公告)日：2023-10-31

申请号：US17590120

申请日：2022-02-01

Applicant: TOSOH CORPORATION

Inventor： Masami Mesuda ,  Hideto Kuramochi

IPC: C01B21/06 ,  C23C14/34 ,  C30B29/38 ,  C04B35/58 ,  C23C14/06 ,  C30B23/02 ,  C30B25/20 ,  C30B29/40 ,  C30B29/68 ,  H01J37/34

CPC classification number: C01B21/0632 ,  C04B35/58 ,  C23C14/0641 ,  C23C14/34 ,  C23C14/3414 ,  C30B23/025 ,  C30B25/20 ,  C30B29/38 ,  C30B29/406 ,  C30B29/68 ,  H01J37/3426 ,  C01P2006/10 ,  C01P2006/40 ,  C01P2006/80

Abstract: A sputtering target for a gallium nitride thin film, which has a low oxygen content, a high density and a low resistivity. A gallium nitride powder having powder physical properties of a low oxygen content and a high bulk density is used and hot pressing is conducted at high temperature in high vacuum to prepare a gallium nitride sintered body having a low oxygen content, a high density and a low resistivity.