公开(公告)号：US12227830B2

公开(公告)日：2025-02-18

申请号：US17996718

申请日：2021-04-19

Applicant: TOSOH CORPORATION

Inventor： Yuya Tsuchida ,  Masami Mesuda ,  Hiroyuki Hara ,  Osamu Matsunaga

IPC: H01J37/34 ,  B22D7/00 ,  C23C14/18 ,  C23C14/34 ,  C23C14/58

Abstract: Provided is an yttrium ingot from which an yttrium sputtering target that produces a reduced number of particles can be obtained, and an yttrium sputtering target that has high plasma resistance and a low resistance that enables realization of a high film deposition rate can be obtained.
An yttrium ingot, wherein the yttrium ingot has a fluorine atom content of less than or equal to 10 wt %; in an instance where the yttrium ingot constitutes a target, a sputtering surface of the target has a surface roughness of 10 nm or greater and 2 μm or less; in the yttrium ingot, the number of pores having a diameter of greater than or equal to 100 μm is fewer than or equal to 0.1/cm2; and the yttrium ingot has a relative density of greater than or equal to 96%.

公开(公告)号：US12173398B2

公开(公告)日：2024-12-24

申请号：US17906927

申请日：2021-03-24

Applicant: TOSOH CORPORATION

Inventor： Hiroyuki Hara ,  Masami Mesuda ,  Ayaka Masuda

IPC: H01J37/34 ,  C23C14/34

Abstract: A Cr—Si sintered body contains Cr and Si. The Cr—Si sintered body contains a crystalline CrSi2 phase and a crystalline Si phase. A content of the Si phase in the Cr—Si sintered body is 40% by mass or more. A relative density of the Cr—Si sintered body relative to a true density of the Cr—Si sintered body is 95% or more. The CrSi2 phase has an average crystal grain size of 40 μm or less, and the Si phase has an average crystal grain size of 30 μm or less. A total content of impurities in the Cr—Si sintered body is 200 ppm by mass or less, and the impurities are composed of at least one element selected from the group consisting of Mn, Fe, Mg, Ca, Sr, and Ba.

公开(公告)号：US11967493B2

公开(公告)日：2024-04-23

申请号：US17295191

申请日：2019-11-18

Applicant: TOSOH CORPORATION

Inventor： Hiroyuki Hara ,  Hideto Kuramochi ,  Kenichi Itoh

IPC: H01J37/34 ,  C04B35/58 ,  C23C14/06 ,  C23C14/34

CPC classification number: H01J37/3429 ,  C04B35/58092 ,  C23C14/0682 ,  C23C14/3414 ,  C04B2235/3891 ,  C04B2235/428 ,  C04B2235/77 ,  C04B2235/786

Abstract: It is difficult for a Cr—Si-based sintered body composed of chromium silicide (CrSi2) and silicon (Si) to have high strength.
Provided is a Cr—Si-based sintered body including Cr (chromium) and silicon (Si), in which the crystal structure attributed by X-ray diffraction is composed of chromium silicide (CrSi2) and silicon (Si), a CrSi2 phase is present at 60 wt % or more in a bulk, a density of the sintered body is 95% or more, and an average grain size of the CrSi2 phase is 60 μm or less.

公开(公告)号：US10669208B2

公开(公告)日：2020-06-02

申请号：US16068596

申请日：2016-12-28

Applicant: TOSOH CORPORATION

Inventor： Kenichi Itoh ,  Hiroyuki Hara ,  Shinichi Hara

IPC: C04B35/64 ,  C04B35/453 ,  H01J37/34 ,  C23C14/34 ,  C23C14/08 ,  C04B35/626

Abstract: An oxide sintered body is provided which does not splash from the target surface even at the time of high power film formation, has a high film formation rate, and is used in a sputtering target capable of providing a high-refractive-index film.An oxide sintered body is used which contains zinc, niobium, aluminum and oxygen as constituent elements and in which Nb/(Zn+Nb+Al)=0.076 to 0.289 and Al/(Zn+Nb+Al)=0.006 to 0.031, where Zn, Nb and Al denote contents of zinc, niobium and aluminum, respectively.