-
公开(公告)号：US20250004383A1
公开(公告)日：2025-01-02
申请号：US18346113
申请日：2023-06-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Kenji YAMAZOE , Chih-Shiang CHOU
IPC: G03F7/00 , G03F1/70 , H01L21/033
Abstract: A process for forming a photolithography mask includes generating a sub-resolution assist feature (SRAF) pattern from a blank mask layout based on a target layout. The SRAF pattern can be generated using an iterative process including finding the gradient of a cost function. A main pattern can be generated simultaneously with the SRAF pattern or after generation of the SRAF pattern.
Search Results
1
records
(took 0.016 seconds)
筛选
AND
AND
过滤
NOT
NOT
Scan to Join
