公开(公告)号：US10818779B2

公开(公告)日：2020-10-27

申请号：US16517246

申请日：2019-07-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Che Tseng ,  Chen-Yuan Wang ,  Wilson Hsieh ,  Yi-Hung Lin ,  Chung-Li Huang

IPC: H01L29/66 ,  H01L21/8234 ,  H01L21/66 ,  H01L21/308 ,  G03F1/38

Abstract: An IC manufacturing method includes forming first mandrels and second mandrels over a substrate; and forming first spacers on sidewalls of the first mandrels and second spacers on sidewalls of the second mandrels. Each of the first and second spacers has a loop structure with two curvy portions connected by two lines. The method further includes removing the first and second mandrels; and removing the curvy portions from each of the first spacers without removing the curvy portions from the second spacers. The second spacers are used for monitoring variations of the IC fabrication processes.

公开(公告)号：US20190341474A1

公开(公告)日：2019-11-07

申请号：US16517246

申请日：2019-07-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Che Tseng ,  Chen-Yuan Wang ,  Wilson Hsieh ,  Yi-Hung Lin ,  Chung-Li Huang

IPC: H01L29/66 ,  H01L21/308 ,  G03F1/38 ,  H01L21/66 ,  H01L21/8234

Abstract: An IC manufacturing method includes forming first mandrels and second mandrels over a substrate; and forming first spacers on sidewalls of the first mandrels and second spacers on sidewalls of the second mandrels. Each of the first and second spacers has a loop structure with two curvy portions connected by two lines. The method further includes removing the first and second mandrels; and removing the curvy portions from each of the first spacers without removing the curvy portions from the second spacers. The second spacers are used for monitoring variations of the IC fabrication processes.

公开(公告)号：US10361286B2

公开(公告)日：2019-07-23

申请号：US15191916

申请日：2016-06-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Che Tseng ,  Chen-Yuan Wang ,  Wilson Hsieh ,  Yi-Hung Lin ,  Chung-Li Huang

IPC: H01L29/66 ,  G03F1/38 ,  H01L21/8234 ,  H01L21/66

Abstract: An IC manufacturing method includes forming first mandrels and second mandrels over a substrate; and forming first spacers on sidewalls of the first mandrels and second spacers on sidewalls of the second mandrels. Each of the first and second spacers has a loop structure with two curvy portions connected by two lines. The method further includes removing the first and second mandrels; and removing the curvy portions from each of the first spacers without removing the curvy portions from the second spacers. The second spacers are used for monitoring variations of the IC fabrication processes.

公开(公告)号：US20170372974A1

公开(公告)日：2017-12-28

申请号：US15191916

申请日：2016-06-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Che Tseng ,  Chen-Yuan Wang ,  Wilson Hsieh ,  Yi-Hung Lin ,  Chung-Li Huang

IPC: H01L21/66 ,  H01L29/66

CPC classification number: H01L29/66795 ,  H01L21/3086 ,  H01L21/823431 ,  H01L22/12 ,  H01L22/20 ,  H01L22/30 ,  H01L29/6653 ,  H01L29/6656

Abstract: An IC manufacturing method includes forming first mandrels and second mandrels over a substrate; and forming first spacers on sidewalls of the first mandrels and second spacers on sidewalls of the second mandrels. Each of the first and second spacers has a loop structure with two curvy portions connected by two lines. The method further includes removing the first and second mandrels; and removing the curvy portions from each of the first spacers without removing the curvy portions from the second spacers. The second spacers are used for monitoring variations of the IC fabrication processes.