公开(公告)号：US20190341474A1

公开(公告)日：2019-11-07

申请号：US16517246

申请日：2019-07-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Che Tseng ,  Chen-Yuan Wang ,  Wilson Hsieh ,  Yi-Hung Lin ,  Chung-Li Huang

IPC: H01L29/66 ,  H01L21/308 ,  G03F1/38 ,  H01L21/66 ,  H01L21/8234

Abstract: An IC manufacturing method includes forming first mandrels and second mandrels over a substrate; and forming first spacers on sidewalls of the first mandrels and second spacers on sidewalls of the second mandrels. Each of the first and second spacers has a loop structure with two curvy portions connected by two lines. The method further includes removing the first and second mandrels; and removing the curvy portions from each of the first spacers without removing the curvy portions from the second spacers. The second spacers are used for monitoring variations of the IC fabrication processes.

公开(公告)号：US10361286B2

公开(公告)日：2019-07-23

申请号：US15191916

申请日：2016-06-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Che Tseng ,  Chen-Yuan Wang ,  Wilson Hsieh ,  Yi-Hung Lin ,  Chung-Li Huang

IPC: H01L29/66 ,  G03F1/38 ,  H01L21/8234 ,  H01L21/66

Abstract: An IC manufacturing method includes forming first mandrels and second mandrels over a substrate; and forming first spacers on sidewalls of the first mandrels and second spacers on sidewalls of the second mandrels. Each of the first and second spacers has a loop structure with two curvy portions connected by two lines. The method further includes removing the first and second mandrels; and removing the curvy portions from each of the first spacers without removing the curvy portions from the second spacers. The second spacers are used for monitoring variations of the IC fabrication processes.

公开(公告)号：US09746310B2

公开(公告)日：2017-08-29

申请号：US14935006

申请日：2015-11-06

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ying-Chieh Hung ,  Yi-Hung Lin ,  Yu-Wei Chou

IPC: G01N21/00 ,  G01B11/00 ,  G01B11/03 ,  G01B15/00

CPC classification number: G01B11/002 ,  G01B11/03 ,  G01B15/00 ,  G01B2210/56 ,  H01L21/823431 ,  H01L22/12 ,  H01L29/66795

Abstract: A method for measuring an implant dosage distribution of a semiconductor sample is provided. The method includes generating a photomodulation effect in a three-dimensional structure of the semiconductor sample and measuring a reflection information of the three-dimensional structure. A geometry information of the three-dimensional structure of the semiconductor sample is obtained. The geometry information of the three-dimensional structure is converted into an estimated reflective data. The reflection information is compared with the estimated reflective data to determine the implant dosage distribution of the three-dimensional structure of the semiconductor sample.

公开(公告)号：US11725278B2

公开(公告)日：2023-08-15

申请号：US16723643

申请日：2019-12-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kun-Mo Lin ,  Yi-Hung Lin ,  Jr-Hung Li ,  Tze-Liang Lee ,  Ting-Gang Chen ,  Chung-Ting Ko

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/509 ,  H01L21/02 ,  H01L21/285

CPC classification number: C23C16/45536 ,  C23C16/45551 ,  C23C16/45565 ,  C23C16/509 ,  H01J37/3244 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32366 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32532 ,  H01J37/32541 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/02274 ,  H01L21/28556

Abstract: A system and method for plasma enhanced deposition processes. An exemplary semiconductor manufacturing system includes a susceptor configured to hold a semiconductor wafer and a sector disposed above the susceptor. The sector includes a first plate and an overlying second plate, operable to form a plasma there between. The first plate includes a plurality of holes extending through the first plate, which vary in at least one of diameter and density from a first region of the first plate to a second region of the first plate.

公开(公告)号：US10818779B2

公开(公告)日：2020-10-27

申请号：US16517246

申请日：2019-07-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Che Tseng ,  Chen-Yuan Wang ,  Wilson Hsieh ,  Yi-Hung Lin ,  Chung-Li Huang

IPC: H01L29/66 ,  H01L21/8234 ,  H01L21/66 ,  H01L21/308 ,  G03F1/38

Abstract: An IC manufacturing method includes forming first mandrels and second mandrels over a substrate; and forming first spacers on sidewalls of the first mandrels and second spacers on sidewalls of the second mandrels. Each of the first and second spacers has a loop structure with two curvy portions connected by two lines. The method further includes removing the first and second mandrels; and removing the curvy portions from each of the first spacers without removing the curvy portions from the second spacers. The second spacers are used for monitoring variations of the IC fabrication processes.

公开(公告)号：US20160341674A1

公开(公告)日：2016-11-24

申请号：US15161046

申请日：2016-05-20

Applicant: Industrial Technology Research Institute ,  Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Li WU ,  Yun-San Chien ,  Wei-En Fu ,  Shyh-Shin Ferng ,  Yi-Hung Lin

IPC: G01N23/20 ,  G01B15/02

CPC classification number: G01N23/20 ,  G01B15/08 ,  G01B2210/56

Abstract: This application relates to an apparatus and methods for enhancing the performance of X-ray reflectometry (XRR) when used in characterizing thin films and nanostructures supported on a flat substrate. In particular, this application is targeted for addressing the difficulties encountered when XRR is applied to samples with very limited sampling volume, i.e. a combination of small sampling area and miniscule sample thickness or structure height. Point focused X-ray with long wavelength, greater than that from a copper anode or 0.154 nm, is preferably used with appropriately controlled collimations on both incident and detection arms to enable the XRR measurements of samples with limited volumes.

Abstract translation: 本申请涉及用于表征支撑在平坦基板上的薄膜和纳米结构时用于提高X射线反射测量（XRR）性能的装置和方法。 特别地，本申请的目的在于解决将XRR应用于具有非常有限的取样体积的样品时遇到的困难，即小取样面积和微小样品厚度或结构高度的组合。 优选使用具有比来自铜阳极或0.154nm的波长的长波长的点聚焦X射线，并且在入射和检测臂上具有适当控制的准直，以使XRR测量具有有限体积的样品。

公开(公告)号：US10519545B2

公开(公告)日：2019-12-31

申请号：US15169037

申请日：2016-05-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kun-Mo Lin ,  Yi-Hung Lin ,  Jr-Hung Li ,  Tze-Liang Lee ,  Ting-Gang Chen ,  Chung-Ting Ko

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/509 ,  H01L21/02 ,  H01L21/285

Abstract: A system and method for plasma enhanced deposition processes. An exemplary semiconductor manufacturing system includes a susceptor configured to hold a semiconductor wafer and a sector disposed above the susceptor. The sector includes a first plate and an overlying second plate, operable to form a plasma there between. The first plate includes a plurality of holes extending through the first plate, which vary in at least one of diameter and density from a first region of the first plate to a second region of the first plate.

公开(公告)号：US10163669B2

公开(公告)日：2018-12-25

申请号：US15010935

申请日：2016-01-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ying-Chieh Hung ,  Ming-Hua Yu ,  Yi-Hung Lin ,  Jet-Rung Chang

IPC: G01B11/02 ,  H01L21/67 ,  G01B11/06 ,  H01L21/02 ,  H01L21/265 ,  H01L21/324 ,  H01L21/66

Abstract: A method for thickness measurement includes forming an implantation region in a semiconductor substrate. A semiconductor layer is formed on the implantation region of the semiconductor substrate. Modulated free carriers are generated in the implantation region of the semiconductor substrate. A probe beam is provided on the semiconductor layer and the implantation region of the semiconductor substrate with the modulated free carriers therein. The probe beam reflected from the semiconductor layer and the implantation region is detected to determine a thickness of the semiconductor layer.

公开(公告)号：US20170372974A1

公开(公告)日：2017-12-28

申请号：US15191916

申请日：2016-06-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Che Tseng ,  Chen-Yuan Wang ,  Wilson Hsieh ,  Yi-Hung Lin ,  Chung-Li Huang

IPC: H01L21/66 ,  H01L29/66

CPC classification number: H01L29/66795 ,  H01L21/3086 ,  H01L21/823431 ,  H01L22/12 ,  H01L22/20 ,  H01L22/30 ,  H01L29/6653 ,  H01L29/6656

Abstract: An IC manufacturing method includes forming first mandrels and second mandrels over a substrate; and forming first spacers on sidewalls of the first mandrels and second spacers on sidewalls of the second mandrels. Each of the first and second spacers has a loop structure with two curvy portions connected by two lines. The method further includes removing the first and second mandrels; and removing the curvy portions from each of the first spacers without removing the curvy portions from the second spacers. The second spacers are used for monitoring variations of the IC fabrication processes.

公开(公告)号：US10151713B2

公开(公告)日：2018-12-11

申请号：US15161046

申请日：2016-05-20

Applicant: Industrial Technology Research Institute ,  Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Li Wu ,  Yun-San Chien ,  Wei-En Fu ,  Shyh-Shin Ferng ,  Yi-Hung Lin

IPC: G01N23/20 ,  G01B15/08

Abstract: This application relates to an apparatus and methods for enhancing the performance of X-ray reflectometry (XRR) when used in characterizing thin films and nanostructures supported on a flat substrate. In particular, this application is targeted for addressing the difficulties encountered when XRR is applied to samples with very limited sampling volume, i.e. a combination of small sampling area and miniscule sample thickness or structure height. Point focused X-ray with long wavelength, greater than that from a copper anode or 0.154 nm, is preferably used with appropriately controlled collimations on both incident and detection arms to enable the XRR measurements of samples with limited volumes.