公开(公告)号：US20150115322A1

公开(公告)日：2015-04-30

申请号：US14554179

申请日：2014-11-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Kai CHEN ,  Hsien-Hsin LIN ,  Chia-Pin LIN ,  Chien-Tai CHAN ,  Yuan-Ching PENG

IPC: H01L27/092 ,  H01L29/78

CPC classification number: H01L27/0924 ,  H01L21/823431 ,  H01L21/823821 ,  H01L21/845 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7853

Abstract: A method includes forming a first fin and a second fin extending above a semiconductor substrate, with a shallow trench isolation (STI) region between them. A space is defined between the first and second fins above a top surface of the STI region. A first height is defined between the top surface of the STI region and top surfaces of the first and second fins. A flowable dielectric material is deposited into the space. The dielectric material has a top surface above the top surface of the STI region, so as to define a second height between the top surface of the dielectric material and the top surfaces of the first and second fins. The second height is less than the first height. First and second fin extensions are epitaxially formed above the dielectric, on the first and second fins, respectively, after the depositing step.

Abstract translation: 一种方法包括形成在半导体衬底之上延伸的第一鳍片和第二鳍片，在它们之间具有浅沟槽隔离（STI）区域。 在STI区域的顶表面之上的第一和第二鳍之间限定空间。 第一高度限定在STI区域的顶表面和第一鳍片和第二鳍片的顶表面之间。 可流动的电介质材料沉积到该空间中。 电介质材料具有在STI区域的顶表面上方的顶表面，以便在介电材料的顶表面和第一和第二鳍片的顶表面之间限定第二高度。 第二个高度小于第一个高度。 在沉积步骤之后，第一和第二鳍片延伸部分别外延形成在电介质上方，分别在第一和第二鳍片上。