公开(公告)号：US20250102927A1

公开(公告)日：2025-03-27

申请号：US18472779

申请日：2023-09-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chien-Hua FU ,  Che-Chang HSU ,  Kai-Fa HO ,  Li-Jui CHEN

IPC: G03F7/00 ,  G03F7/20 ,  H01L21/027 ,  H01M8/04029 ,  H01M8/0662 ,  H01M8/24 ,  H01M10/44 ,  H01M16/00

Abstract: A method includes: forming a mask layer on a semiconductor wafer; generating light by a tin droplet by a lithography exposure system; exposing the mask layer by the light; cleaning tin debris accumulated in the lithography exposure system by hydrogen gas; pumping the hydrogen gas from the lithography exposure system to a fuel cell; and generating electric power by the fuel cell.