公开(公告)号：US20250102927A1

公开(公告)日：2025-03-27

申请号：US18472779

申请日：2023-09-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chien-Hua FU ,  Che-Chang HSU ,  Kai-Fa HO ,  Li-Jui CHEN

IPC: G03F7/00 ,  G03F7/20 ,  H01L21/027 ,  H01M8/04029 ,  H01M8/0662 ,  H01M8/24 ,  H01M10/44 ,  H01M16/00

Abstract: A method includes: forming a mask layer on a semiconductor wafer; generating light by a tin droplet by a lithography exposure system; exposing the mask layer by the light; cleaning tin debris accumulated in the lithography exposure system by hydrogen gas; pumping the hydrogen gas from the lithography exposure system to a fuel cell; and generating electric power by the fuel cell.

公开(公告)号：US20180151356A1

公开(公告)日：2018-05-31

申请号：US15706095

申请日：2017-09-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. ,  NATIONAL TAIWAN UNIVERSITY

Inventor： Chien-Hua FU ,  Keng-Yung LIN ,  Yen-Hsun LIN ,  Kuanhsiung CHEN ,  Juei-Nai KWO ,  Minghwei HONG

IPC: H01L21/02 ,  H01L21/28 ,  H01L27/06 ,  H01L29/51 ,  H01L21/324

CPC classification number: H01L21/02387 ,  H01L21/02192 ,  H01L21/02266 ,  H01L21/0228 ,  H01L21/02318 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28264 ,  H01L21/324 ,  H01L27/0629 ,  H01L29/20 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66522 ,  H01L29/78

Abstract: A method for manufacturing a semiconductor device includes forming a semiconductor layer on a substrate, forming a high-κ dielectric layer directly on the semiconductor layer as formed, and annealing the semiconductor layer, the high-dielectric layer, and the substrate. The semiconductor layer is a Group III-V compound semiconductor.