公开(公告)号：US20210335616A1

公开(公告)日：2021-10-28

申请号：US17370684

申请日：2021-07-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hong-Ying LIN ,  Cheng-Yi WU ,  Alan TU ,  Chung-Liang CHENG ,  Li-Hsuan CHU ,  Ethan HSIAO ,  Hui-Lin SUNG ,  Sz-Yuan HUNG ,  Sheng-Yung LO ,  C.W. CHIU ,  Chih-Wei HSIEH ,  Chin-Szu LEE

IPC: H01L21/285 ,  H01L23/532 ,  H01L23/535 ,  H01L29/08 ,  H01L29/78 ,  H01L29/66 ,  H01L21/768 ,  H01L29/417

Abstract: A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.

公开(公告)号：US20200043739A1

公开(公告)日：2020-02-06

申请号：US16596617

申请日：2019-10-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hong-Ying LIN ,  Cheng-Yi WU ,  Alan TU ,  Chung-Liang CHENG ,  Li-Hsuan CHU ,  Ethan HSIAO ,  Hui-Lin SUNG ,  Sz-Yuan HUNG ,  Sheng-Yung LO ,  C.W. CHIU ,  Chih-Wei Hsieh ,  Chin-Szu LEE

IPC: H01L21/285 ,  H01L29/78 ,  H01L29/417 ,  H01L23/532 ,  H01L23/535 ,  H01L29/08 ,  H01L29/66 ,  H01L21/768

Abstract: A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.

公开(公告)号：US20170358446A1

公开(公告)日：2017-12-14

申请号：US15180255

申请日：2016-06-13

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Cheng-Yi WU ,  Tzu-Shin Chen ,  Che-Kang Liu ,  Chi-Shun Wang ,  Chin-Szu LEE ,  Chia-Chun HUNG ,  Li-Hsuan CHU

IPC: H01L21/02 ,  G21K5/08

Abstract: A wafer processing apparatus includes at least one pedestal, at least one ultraviolet (UV) light source, and a window. The pedestal is configured to support a wafer. The UV light source is configured to generate UV radiation to the wafer. The window is present between the pedestal and the UV light source. The UV radiation is capable of passing through the window, and the window is a convex lens, a concave lens, or combinations thereof.