公开(公告)号：US11196248B2

公开(公告)日：2021-12-07

申请号：US16178796

申请日：2018-11-02

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Zhao Fang ,  Mark Benjamin Welty

IPC: H02H9/04 ,  G01R19/165 ,  H02H9/00

Abstract: A bidirectional flat clamp device includes a first device node and a second device node. The bidirectional flat clamp device also includes a first switch and a second switch coupled in series between the first and second device nodes. The bidirectional flat clamp device also includes at least one switch driver coupled to the first and second switches. The bidirectional flat clamp device also includes a first current path between the first and second device nodes, the first current path having a first diode, a voltage sensor circuit, and a second diode. The bidirectional flat clamp device also includes a second current path between the first and second device nodes, the second current path having a third diode, the voltage sensor circuit, and a fourth diode.

公开(公告)号：US11276688B2

公开(公告)日：2022-03-15

申请号：US16430043

申请日：2019-06-03

Applicant: Texas Instruments Incorporated

Inventor： Vrashank Gurudatta Shukla ,  Mark Benjamin Welty ,  Lifang Lou

IPC: H01L27/08 ,  H01L23/495 ,  H01L29/66 ,  H01L29/06 ,  H01L29/866 ,  H01L27/02

Abstract: An electronic device includes a first-conductivity-type substrate and a second-conductivity-type epitaxial layer having a first dopant concentration. A first substrate region includes a second-conductivity-type buried layer and is enclosed by a first deep isolation structure. Within the first substrate region are a first doped region having the second conductivity type and a dopant concentration greater than the first dopant concentration and a second doped region having the first conductivity type. A second substrate region includes a first-conductivity-type buried layer and is enclosed by a second deep isolation structure. Within the second substrate region is a third doped region having the second conductivity type and a dopant concentration greater than the first dopant concentration.

公开(公告)号：US20190123556A1

公开(公告)日：2019-04-25

申请号：US16027914

申请日：2018-07-05

Applicant: Texas Instruments Incorporated

Inventor： Zhao Fang ,  Emmanuel Osei Boakye ,  Mark Benjamin Welty ,  Eddie W. Yu

IPC: H02H9/04 ,  H01L29/78 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/866 ,  H01L27/02

Abstract: A surge protection device for providing bidirectional detections of one or more surge events. The device has low dynamic resistance during a surge protection mode, and it conducts ultra-low leakage current outside of the surge protection mode. In one implementation, the device includes first and second power transistors, a sensing circuit, and a driver circuit. The first power transistor includes a first source terminal that is coupled to the substrate, and the second power transistor includes a second source terminal that is coupled to the substrate. The sensing circuit is configured to detect a voltage of the first pin relative to the second pin and generate a sense signal when the voltage exceeds a threshold. The driver circuit is configured to generate a driver signal based on the sense signal and output the driver signal to at least one of the first or second gate terminal.

公开(公告)号：US11196250B2

公开(公告)日：2021-12-07

申请号：US16027914

申请日：2018-07-05

Applicant: Texas Instruments Incorporated

Inventor： Zhao Fang ,  Emmanuel Osei Boakye ,  Mark Benjamin Welty ,  Eddie W. Yu

IPC: H02H9/04 ,  H01L29/08 ,  H01L27/02 ,  H01L29/417 ,  H01L29/866 ,  H01L29/10 ,  H01L29/78

Abstract: A surge protection device for providing bidirectional detections of one or more surge events. The device has low dynamic resistance during a surge protection mode, and it conducts ultra-low leakage current outside of the surge protection mode. In one implementation, the device includes first and second power transistors, a sensing circuit, and a driver circuit. The first power transistor includes a first source terminal that is coupled to the substrate, and the second power transistor includes a second source terminal that is coupled to the substrate. The sensing circuit is configured to detect a voltage of the first pin relative to the second pin and generate a sense signal when the voltage exceeds a threshold. The driver circuit is configured to generate a driver signal based on the sense signal and output the driver signal to at least one of the first or second gate terminal.

公开(公告)号：US20200381424A1

公开(公告)日：2020-12-03

申请号：US16430043

申请日：2019-06-03

Applicant: Texas Instruments Incorporated

Inventor： Vrashank Gurudatta Shukla ,  Mark Benjamin Welty ,  Lifang Lou

IPC: H01L27/08 ,  H01L23/495 ,  H01L27/02 ,  H01L29/06 ,  H01L29/866 ,  H01L29/66

Abstract: An electronic device includes a first-conductivity-type substrate and a second-conductivity-type epitaxial layer having a first dopant concentration. A first substrate region includes a second-conductivity-type buried layer and is enclosed by a first deep isolation structure. Within the first substrate region are a first doped region having the second conductivity type and a dopant concentration greater than the first dopant concentration and a second doped region having the first conductivity type. A second substrate region includes a first-conductivity-type buried layer and is enclosed by a second deep isolation structure. Within the second substrate region is a third doped region having the second conductivity type and a dopant concentration greater than the first dopant concentration.